Texas Instruments Corporation

Danny F Mathews

Neal T Murphy

Claire Ching-Shan Jung

A method for resist strip and metal contamination removal. Wafers ( ) with a patterned resist formed thereon are subjected to an ozonated deionized water solution, such as mist ( ). The ozonated deionized water solution ( ) strips the resist and removes the resist residue. At the end of the process, HCl ( ) is added to the deionized water ( ) prior to forming the ozonated deionized water solution ( ) to remove metal contaminants.

Ozonated DI water process for organic residue and metal removal processes

A method and apparatus for resist strip. Wafers ( ) with a patterned resist formed thereon are placed in a carrier ( ) in a process chamber ( ). An ozonated deionized water mist ( ) is sprayed on the surface of wafer ( ). The ozonated deionized water mist ( ) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist ( ) may be formed in an atomizer that mixes deionized water ( ) with ozone ( ). The ozonated deionized water mist ( ) is then sprayed onto the wafers ( ) while the wafers are being rotated.

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Plano, TX, United States of America

Danny F Mathews