Agilent Technologies, Inc.

Sundiode Inc.

Other

Hewlett-packard Company

Avago Technologies General IP (singapore) Pte. Ltd.

Danny E Mars

Sungsoo Yi

James Chinmo Kim

Tetsuya Takeuchi

Jeffrey N Miller

Ying-Lan Chang

David P Bour

Scott W Corzine

Ken A Nishimura

Steven D Lester

Long Yang

Richard P Schneider

Ghulam Hasnain

Danielle Russell Chamberlin

Michael H Leary

Mark R Hueschen

Sungwon David Roh

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Nanostructure optoelectronic device with independently controllable junctions

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.

Nanostructure optoelectronic device having sidewall electrical contact

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

Multi-junction solar cell having sidewall bi-layer electrical interconnect

A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant

The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.

Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice

An optical semiconductor device having an active layer for generating light via the recombination of holes and electrons therein. The active layer is part of a plurality of semiconductor layers including an n-p junction between an n-type layer and a p-type layer. The active layer has a polarization field therein having a field direction that depends on the orientation of the active layer when the active layer is grown. In the present invention, the polarization field in the active layer has an orientation such that the polarization field is directed from the n-layer to the p-layer.

Efficiency GaN-based light emitting devices

A microfluidic system for steering subject materials to a next processing region includes a substrate having at least one embedded gas generator that is activated in response to the result of an initial process, whereby a gas is formed having pressure to steer the subject materials to the next processing region. The gas generator includes resistors that are electrically activated. As current passes through the resistors, thermal energy is released to decompose a selected material from a solid or liquid state to gaseous state. In an alternative embodiment, a gas generator is activated in response to an external control.

Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generators

A light emitting device and a method of fabricating the device include a wavelength selective reflector that is formed between a light source and a layer of phosphorescent material. The light emitting device is a phosphor-conversion light emitting diode (LED) that outputs secondary light that is converted from primary light emitted from the light source. In the preferred embodiment, the light source is a Gallium Nitride (GaN) die and the wavelength selective reflector is a distributed Bragg reflector (DBR) mirror. The DBR mirror is comprised of multiple alternating layers of high and low refractive index materials. The high refractive index material may be Titanium Dioxide (TiO.sub.2) and the low refractive index material may be Silicon Dioxide (SiO.sub.2). An encapsulating layer over the GaN die provides a distance between the GaN die and the DBR mirror. Preferably, the encapsulating layer is a dome-shaped structure and the DBR mirror forms a dome-shaped shell over the encapsulating layer. In the most preferred embodiment, the dome-shaped configuration of the encapsulating layer and the DBR mirror is generally hemispheric. The dome-shaped configuration of the DBR mirror reduces the cone-angle average of the primary light from the light source, thereby improving the transmittance characteristic of the DBR mirror with respect to the primary light. Consequently, the amount of output light generated by the LED is significantly improved.

Efficient phosphor-conversion led structure

A vertical cavity surface emitting laser (VCSEL) that generates light having a desired wavelength, greater than one micron. The laser comprises a substrate, a lower mirror region, an active region and an upper mirror region. The substrate consists essentially of GaAs. The lower mirror region is adjacent the substrate and is lattice matched to the substrate. The active region is sandwiched between the upper and lower mirror regions, and includes a central quantum well region and a gallium arsenide layer sandwiched between the quantum well region and each of the lower mirror region and the upper mirror region. The central quantum well region includes a quantum well layer consisting essentially of GaN.sub.x As.sub.(1-x). The GaN.sub.x As.sub.(1-x) of the quantum well layer has a lattice constant and a band gap dependent on x. The value of x sets the bandgap of the GaN.sub.x As.sub.(1-x) of the quantum well layer to a value corresponding to light generation at the desired wavelength, greater than one micron. Each gallium arsenide layer is a layer of a material consisting essentially of GaAs or AlGaAs, and is lattice matched to the substrate. The quantum well layer may additionally include a fraction of indium to lattice match the quantum well layer to the substrate.

Long-wavelength infra-red vertical cavity surface-emitting laser on a

A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.

Growing community of inventors

Los Altos, CA, United States of America

Danny E Mars