Lpe S.p.a.

E.t.c. Epitaxial Technology Center Srl

Denso Corporation

Danilo Crippa

Franco Preti

Francesco Corea

Gianluca Valente

Vincenzo Ogliari

Yuichiro Tokuda

Maurilio Meschia

Giacomo Nicolao Maccalli

Laura Gobbo

Marco Mauceri

Marco Puglisi

Carmelo Vecchio

Olle Kordina

Silvio Preti

Natale Speciale

Vittorio Pozzetti

Speciale Natale

The reaction chamber () is designed for a reactor () for deposition of layers of semiconductor material on substrates; it comprises a tube () and an injector () and a holder (); the tube () is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector () is arranged to inject precursor gases into the reaction and deposition zone; the holder () is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements () are located inside the tube () for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system () is located outside the tube () for providing energy to the susceptor elements () by electromagnetic induction; a rotating element () in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector ().

Reaction chamber comprising a rotating element for the deposition of a semiconductor material

The reaction chamber () is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube () made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis () is vertical; the tube () has a cylindrical inner interspace () which extends along the entire length of the tube () and which is adapted to accommodate a flowing liquid; the chamber () further comprises an annular closing element () made of quartz and fixed to a first lower end of the tube () so as to close the interspace () preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element () has an annular recess () facing the interspace () so that the flowing liquid can reach the recess () at the bottom; the chamber () further comprises a set of internal conduits () internal to the interspace (), wherein said internal conduits () extend from the first lower region of the tube () till a second upper region of the tube () to facilitate circulation of the flowing liquid in the interspace ().

Reaction chamber for a deposition reactor with interspace and lower closing element and reactor

The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body () having a first face and a second face, wherein the first face comprises at least one zone () adapted to receive a substrate () to be subjected to epitaxial growth and at least one supporting element () for the substrate (), located at the zone (); the supporting element () comprises a circular disc () with an edge () which is raised with respect to the disc; the zone () may be a bottom of a recess () or a top of a relief of the disc-shaped body (); the disc-shaped body () is solid at least at the recess () or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Susceptor with supporting element

A reaction chamber of a reactor for epitaxial growth includes a wall () with a recess and a susceptor () comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (). The chamber includes a discoid supporting element (), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering () located over said wall () and a hole () at said discoid supporting element (). The shape of said hole () corresponds to the shape of said discoid supporting element (). The covering () has at least one hollow guide () for the passage of a device () for loading/unloading said discoid supporting element (), wherein said hollow guide () extends from an edge of said covering () to said hole ().

Reaction chamber for epitaxial growth with a loading/unloading device and reactor

The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity () which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (), by a lower wall (), by a right-hand side wall (), and by a left-hand side wall (); the upper wall () is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall () is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall () is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall () is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall () is thus electrically well insulated from the piece of the lower wall ().

Susceptor system

The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber () delimited by at least two walls and with at least one heating solenoid (); the susceptor system comprises at least one susceptor element () delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element () is hollow; a first portion of the outer surface of the susceptor element () is suitable for acting as a wall of the treatment chamber (); a second portion of the outer surface of the susceptor element () is suitable for being disposed close to the heating solenoid ().

A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

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Novara, Italy

Danilo Crippa