Helmholtz-Zentrum Dresden-Rossendorf E.v.

Danilo Buerger

Heidemarie Schmidt

Ilona Skorupa

Nan Du

Tiangui You

Agnieszka Bogusz

Slawomir Prucnal

Niveditha Manjunath

Laveen Selvaraj

A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

Detector comprising a variable capacitance diode

Disclosed is a complementary resistor switch () comprising two outer contacts, between which two piezo- or ferroelectric layers (and) having an inner common contact are situated. At least one region (&#x2033;) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence

Disclosed is a complementary resistor switch () comprising two outer contacts, between which two piezo- or ferroelectric layers (and) having an inner common contact are situated. At least one region (&#x2033;) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (O), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

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Dresden, Germany

Danilo Buerger