Motorola Corporation

Danielle Bielle Daspet

Emmanuel Scheid

Jean Michel Reynes

Andre Peyre-Lavigne

A semiconductor fuse device is formed of a conductive semiconductor substrate (11) having a top surface and a bottom surface. A layer (12) of dielectric material is provided on a portion of the top surface and a first conductive layer (15) is formed wholly on a first portion of the layer (12) of dielectric material and forms a first contact of the device. A second conductive layer (14) is formed on a second portion of the layer (12) of dielectric material spaced from the first portion and extends to contact the top surface of the substrate (11). A fuse portion (16) is formed wholly on the layer (12) of dielectric material and extends between and in electrical contact with the first and second conductive layers (14, 15). The bottom surface of the substrate (11) provides a second contact of the device, so that only one wire bond is necessary.

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Labege, France

Danielle Bielle Daspet