China Triumph International Engineering Co., Ltd.

Ctf Solar Gmbh

Daniele Menossi

Shou Peng

Bastian Siepchen

Michael Harr

Xinjian Yin

Ganhua Fu

The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSeTelayer having a first amount wof selenium in it, forming a second CdSeTelayer having a second amount wof selenium in it and forming a third CdSeTelayer having a third amount wof selenium in it. The second amount wlies in the range between 0.25 and 0.4, whereas each of the amounts wand wlies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSeTelayers is equal to or higher than 1.45 eV and the energy gap in the second CdSeTelayer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSeTelayers.

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DRESDEN, Germany

Daniele Menossi