International Business Machines Corporation

Western Digital Technologies, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Western Digital (fremont), Inc.

Hgst Netherlands, B.v.

Sandisk Technologies Inc.

Hitachi Global Technologies Netherlands B.v.

Daniele Mauri

Tsann Lin

Ming Mao

Xiaoyong Liu

Chih-Ching Hu

Chen-jung Chien

Kuok San Ho

Yuankai Zheng

Ming Jiang

Yukimasa Okada

Yung-Hung Wang

Anup Roy

Christian Kaiser

Savas Gider

Wen Yaung Lee

Quang Le

David John Seagle

Alexander Michael Zeltser

Yunfei Ding

Guanxiong Li

Wen-yaung Lee

Zhigang Bai

Cherngye Hwang

Zhanjie Li

Rongfu Xiao

Petrus Antonius Van Der Heijden

Ji Li

Rajeev Nagabhirava

Changhe Shang

Goncalo Marcos Baião De Albuquerque

Shaoping Li

Suping Song

James K Howard

Alexander Goncharov

Ying Hong

Jinshan Li

Dujiang Wan

Goran Mihajlovic

Shihai He

Ronghui Zhou

Goncalo Baiao De Albuquerque

Norbert Staud

Gonçalo Marcos Baião De Albuquerque

Hui Zhao

Lei Wang

Bruce Alvin Gurney

Richard Hsiao

Neil Leslie Robertson

Neil Smith

Feng Q Liu

Wipul Jayasekara

Zhitao Diao

Stuart Stephen Parkin

Koichi Nishioka

Virgil S Speriosu

Joseph Francis Smyth

Laurence Lujun Chen

Carlos Corona

Amritpal Singh Rana

Dennis R Wilhoit

Yasunari Tajima

Robert John Wilson

Haiwen Xi

Jeffrey Childress

Stefan Maat

Matthew Joseph Carey

Yi Zheng

Mahendra Pakala

Ching Hwa Tsang

Brian Rodrick York

Satoshi Shigematsu

Qunwen Leng

Hugo Alberto Emilio Santini

Sining Mao

Tao Pan

Jui-lung Li

Thao Anh Nguyen

Glen A Garfunkel

Kevin Robert Coffey

Satoru Araki

Robert Beach

Guanghong Luo

David Eugene Heim

Hongquan Jiang

David Patrick Druist

Yongchul Ahn

Guangli Liu

Matthew A Stevenson

Steven E Lambert

Jila Tabib

Ronald Franklin Marks

Bernard Dieny

Haralambos Lefakis

Robin Frederick Farrow

Tsann Linn

Hongxue Liu

Ann Lorraine Carvajal

Chen-Jung Chien

Gonçalo Baião De Albuquerque

Goncalo Albuquerque

Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.

Optical devices for tilt in camera systems

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Magnetic sensor array with different RA TMR film

The present disclosure generally relates to a read head of a data storage device. The read head includes a read sensor sandwiched between two shields. The shields can have different materials as well as a different number of layers. Furthermore the shields can be fabricated by different processes and have different heights and thicknesses. The ratio of the thickness to the height for the shields are substantially identical to ensure that the saturation field are substantially identical and balanced.

Read head sensor with balanced shield design

The present disclosure generally relates to a read head assembly having a dual free layer (DFL) structure disposed between a first shield and a second shield at a media facing surface. The read head assembly further comprises a rear hard bias (RHB) structure disposed adjacent to the DFL structure recessed from the media facing surface, where an insulation layer separates the RHB structure from the DFL structure. The insulation layer is disposed perpendicularly between the first shield and the second shield. The DFL structure comprises a first free layer and a second free layer having equal stripe heights from the media facing surface to the insulation layer. The RHB structure comprises a seed layer, a bulk layer, and a capping layer. The capping layer and the insulation layer prevent the bulk layer from contacting the second shield.

Vertical junction to provide optimal transverse bias for dual free layer read heads

Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A read head includes a first reader, an insulating separation layer, and a second reader disposed above the insulating separation layer. The second reader includes a magnetic seed layer and a cap layer. The second reader includes a first upper free layer disposed between the magnetic seed layer and the cap layer, and a second upper free layer disposed between the first upper free layer and the cap layer. The second reader includes a barrier layer. In one implementation the second reader includes an antiferromagnetic (AFM) layer disposed between the magnetic seed layer and the insulating separation layer to pin the magnetic seed layer.

Magnetic read sensors having stabilized upper readers, and related methods

The present disclosure generally relates to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Recessed from the DFL sensor, and from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB bulk layer includes a first bulk layer and a second bulk layer, the first bulk layer having a different density relative to the second bulk layer.

Method to enhance magnetic strength and robustness of rear hard bias for dual free layer read

The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.

Planar design for sensors in a dual free layer read head

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.

Magnetic sensor array with single TMR film plus laser annealing and characterization

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Magnetic sensor with dual TMR films and the method of making the same

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

High sensitivity TMR magnetic sensor

Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.

Magnetic read sensors and related methods having a rear hard bias and no AFM layer

The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).

Two-dimensional magnetic recording reader with dual free layer magnetic tunnel junction

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Magnetic sensor array with dual TMR film

Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 &#x212b; or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.

TMR sensor with magnetic tunnel junctions with shape anisotropy

The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.

Magnetic sensor bridge using dual free layer

Growing community of inventors

San Jose, CA, United States of America

Daniele Mauri