Vitesco Technologies Gmbh

Daniela Wolf

Detlev Bagung

Christina Quest-Matt

Thomas Riepl

Christina Quest-matt

A power semiconductor component includes at least one power semiconductor device disposed within a housing and a heat sink having an area a exposed on a first surface of the housing. A wiring substrate has a first main surface and a second main surface. A heat dissipation region with increased thermal conductivity is disposed on the second main surface. The heat dissipation region has an area A on the second main surface, and a<A. The housing with the power semiconductor device is disposed on the second main surface of the wiring substrate in such a way that the heat sink is disposed completely on the heat dissipation region and is connected thereto by way of a solder layer. A method for producing a power semiconductor component is also provided.

Power semiconductor component and method for producing a power semiconductor component

A semiconductor component having at least one semiconductor component having a first electrical connector and at least one further electrical connector, a printed circuit board, and a prefabricated metal block group. The metal block group has a first metal block arranged between the semiconductor component and the printed circuit board, connected to a first electrical connector of the semiconductor component by a solder joint and connected to at least one conductor track of the printed circuit board by a further solder joint. The metal block group includes at least one further metal block interposed between the further electrical connection and the printed circuit board by a solder joint. The metal blocks of the prefabricated metal block group are arranged laterally next to one another and have their lateral outer surfaces partially or completely encased by an electrically insulating casing common to them.

Semiconductor component arrangement, method for fabrication thereof and heat dissipation device

A power semiconductor component is specified, having a power semiconductor device arranged within a housing, wherein a heat sink is exposed on a first surface of the housing; a wiring substrate which receives the housing with the power semiconductor device and which has a first main surface and a second main surface. A heat dissipation region with increased thermal conductivity is arranged on the second main surface. The housing is arranged on the wiring substrate in such a way that the heat sink is connected to the heat dissipation region via a solder layer. A number of spacers which are arranged between the heat sink and the heat dissipation region are embedded in the solder layer. Furthermore, a method for producing a power semiconductor component is specified.

A semiconductor assembly includes a semiconductor component having a redistribution substrate with a top side, an underside and a semiconductor chip on the top side. Contact connection pads for connection to contact pads of the chip are on the top side of the substrate. External contact pads on the underside are electrically connected to the contact connection pads by conductor tracks. The external contact pads are at a greater distance from one another in a first region than a second region of the underside. The semiconductor component is on a printed circuit board. Contact pads corresponding to the external contacts are on a top side of the printed circuit board and are at a greater distance from one another in a first region than a second region of the top side. Through holes are formed between the contact pads in the first region of the printed circuit board.

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Munich, Germany

Daniela Wolf