Cabot Microelectronics Corporation

Daniela White

John C Parker

Steven Grumbine

William J Ward

Jeffrey Dysard

Sriram Anjur

Jason Keleher

The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

CMP compositions containing a soluble peroxometalate complex and methods of use thereof

The invention provides an isolated, particulate polyoxometalate complex comprising a water-soluble cationic polymer and a polyoxometalate compound ionically bound to the cationic polymer. The polyoxometalate compound can be an isopolyoxometalate compound, such as an isopolytungstate, or a heteropolyoxometalate compound. The invention further provides a chemical-mechanical polishing composition comprising a preformed polyoxometalate abrasive, as well as a method of chemically-mechanically polishing a substrate therewith.

Polyoxometalate compositions and methods

The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N&#x2014;O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N&#x2014;O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N&#x2014;O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

Ruthenium CMP compositions and methods

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.

Polishing composition and method utilizing abrasive particles treated with an aminosilane

The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.

Copper-passivating CMP compositions and methods

The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 &#x212b;, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 &#x212b;, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.

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Oswego, IL, United States of America

Daniela White