Advanced Micro Devices Corporation

Daniel Yim

Richard C Blish

Xia Li

Mohammad Massoodi

Colin D Hatchard

Susan Xia Li

Aspects for performing decapsulation of multi-chip devices are presented. One aspect includes removing a top die of the multi-chip device without employing a wet chemical etch and removing residual attach and package materials to expose a bottom die of the multi-chip device. An alternate aspect includes utilizing mechanical polishing and wet chemical etching to remove a top die of the multi-chip device, and exposing a bottom die through chemical decapsulation to allow failure analysis of the bottom die. A Flash memory die as a top die and a static random access memory (SRAM) die as a bottom die are included as a multi-chip device capable of decapsulation through these aspects.

Decapsulation techniques for multi-chip (MCP) devices

A system and method for marking a chip-scale package is disclosed. In one aspect, the chip-scale package includes a semiconductor die. The semiconductor die has an exposed portion substantially surrounded by the first coating. In this aspect, the method and system include applying a second coating to a first portion of the first coating and marking the second coating. The first coating is not completely penetrated by the marking. In a second aspect, the method and system include providing a chip-scale package. In this aspect, the method and system comprise providing a substrate, providing a semiconductor die coupled to a substrate, and providing a first coating. The semiconductor die has an exposed portion. The exposed portion is substantially surrounded by the first coating. In this aspect, the method and system further include providing a second coating substantially covering a first portion of the first coating. The second coating has a plurality of markings therein. The first coating is not completely penetrated by the plurality of markings.

System for marking electrophoretic dies while reducing damage due to electrostatic discharge

Aspects for exposing local areas for desired nodes in a multi-layer integrated circuit from the backside are described. In an exemplary method aspect, the method includes removing a predetermined portion of a first backside layer, opening chosen local areas with focused ion beam etching through at least the first backside layer, and exposing a desired node in a metal layer lower than the first backside layer with reactive ion etching. The method further includes removing the predetermined portion by performing reactive ion etching to a predetermined stop point. Alternatively, the first backside layer is mechanically polished to a predetermined thickness. Additionally, the method includes utilizing a high current ion beam during the focused ion beam etching.

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Fremont, CA, United States of America

Daniel Yim