Teledyne Dalsa B.v.

Dalsa Corporation

Koninklijke Philips Corporation N.V.

Trixell

Daniel Wilhelmus Elisabeth Verbugt

Willem Hendrik Maes

Alouisius Wilhelmus Marinus Korthout

Adrianus Johannes Mierop

Jurriaan Schmitz

Willem Johannes Kindt

Edwin Roks

Matthias Sonder

Willem Johan De Haan

Joris Pieter Valentijn Maas

Hein Otto Folkerts

Willem Hoekstra

Daniel Hendrik Jan Maria Hermes

Willem-Hendrik Maes

Willem-Jan Toren

Ernest Jannis Phaff

Aspects of the present disclosure relate to a photon counting detector and to a read-out integrated circuit to be used in such detector. Aspects of the present disclosure particularly relate to X-ray applications. According to an aspect of the present disclosure, the detector comprises an electrical ground plane arranged at or near an interface between the carrier and at least one ROIC die. Each ROIC die comprises an extension region that laterally extends beyond the photon conversion assembly, wherein peripheral circuitry for a given ROIC die is arranged in the extension region of that ROIC die. The detector comprises at least one electrical connection that connects the power supply line that is arranged on the carrier to the peripheral circuitry of the at least one ROIC die.

Photon counting detector

The present invention relates to an image sensor and to an X-ray system comprising such image sensor. More in particular, the invention relates to an image sensor wherein dose sensing pixels are used in conjunction with artificial pixels to sense a dose of incoming light or radiation. According to the invention, the image sensor comprises one or more shielded photo-sensitive pixels that are shielded for incoming photons and which are each configured for outputting a further reference voltage, wherein the input voltage of the artificial pixels is set in dependence on the outputted further reference voltage(s).

Dose sensing pixels reference voltage

The present invention relates to an image sensor and to an imaging system comprising such a sensor. According to the invention, the overall conversion curve describing the conversion between photon flux and digital number comprises a first region in which the conversion is essentially linear and a second region in which the conversion is essentially non-linear. According to the invention, the non-linearity of the second region is obtained by operating the photodiode of the image sensor in its non-linear range and by changing the gain associated with the conversion between pixel voltage and digital number.

Image sensor including read-out circuitry and imaging system comprising the imaging sensor

Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

Semiconductor device with an image sensor and method for the manufacturing of such a device

A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

Pixel for correlated double sampling with global shutter

A method for joining a plurality of reticles is used for producing a semiconductor layout pattern, so that the reticles will collectively map a circuit arrangement on a semiconductor substrate. A plurality of matching patterns is provided that are each geometrically linked to a respective particular reticle and through detecting pairwise correspondence among the matching patterns likewise correspondence among the associated reticles is ascertained. In particular, the method has bulk sub-reticles and peripheral sub-reticles, and a first matching pattern associates to a peripheral sub-reticle that abuts a bulk sub-reticle and a second matching pattern to the bulk sub-reticle at such distance therefrom that fitting of the peripheral sub-reticle between the second matching pattern and the bulk sub-reticle allows matching of the first and second matching patterns. The bulk sub-reticles are used to constitute an array of sub-reticles.

Method of joining a plurality of reticles for use in producing a semiconductor layout pattern, a computerized system for implementing such a method and a semiconductor mask arrangement produced by implementing such a method

The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides. Preferably the first part elements comprises the read-out circuitry of the columns and the second part elements comprises the control circuitry of the rows, the latter preferably being distributed over a number of centrally positioned columns. A device according to the present invention is very suitable for X-ray medical imaging.

Semiconductor device with a CMOS image sensor, apparatus comprising such a semiconductor device and method of manufacturing such a device

A CMOS-based sensor apparatus comprises an array of sensor cells that are interconnected by a first set of vertical driver lines to a selective driver facility and by a second set of horizontal sensing lines to a sensing facility for sensing respectively sensed amounts of radiation. In particular, the sensor cells through being appropriately spaced in at least either row or column direction, comprise a redundancy facility that is selectively activatable for isolating an interconnect short on the basis of externally applied control actuation.

CMOS-based sensor apparatus with cells that comprise a redundancy facility that is selectively activatable for isolating a metal-to-metal short on the basis of externally applied control actuation

A detector and a camera system for electromagnetic radiation being integrated in a solid state substrate are disclosed. Said substrate comprises a first region of a first conductivity and a second region of a second conductivity, said first region being adjacent to said second region, and said first and second region forming a detection junction, at least part of said junction being substantially orthogonal with respect to the plane of the surface of the substrate above said detection junction. The camera system comprises a configuration of pixels in an imaging sensor being integrated in a solid state substrate, essentially each of the pixels comprising a region of a first conductivity type being at least partly surrounded by a region of a second conductivity type, thereby forming a junction region, and wherein the region of the first conductivity type includes at least one contact area. The camera system further comprises means for collecting charge carriers being generated by the radiation impinging on said substrate at least in said region of said first conductivity type and in said junction region, in said contact area.

Growing community of inventors

Helden, Netherlands

Daniel Wilhelmus Elisabeth Verbugt