Dalsa Corporation

Daniel Wihelmus Elisabeth Verbugt

Hermanus L Peek

Joris Pieter Valentijn Maas

A charge coupled device has a hydrogen diffusion path to diffuse hydrogen to a silicon surface. The hydrogen diffusion path extends through a top silicon oxide layer that itself extends through a first aperture in a top silicon nitride layer. The first aperture overlays a conductor formed of polycrystalline silicon at a location that transversely overlays a channel stop. The hydrogen diffusion path extends through the conductor and through an extension of the conductor that itself extends through a second aperture in a lower silicon nitride layer. The lower silicon nitride layer being one part of a gate dielectric film. The gate dielectric film also includes a lower silicon oxide layer disposed between the lower silicon nitride layer and the silicon surface. The hydrogen diffusion path extends through the lower silicon oxide layer to reach the silicon surface.

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Eindhoven, Netherlands

Daniel Wihelmus Elisabeth Verbugt