Samsung Electronics Co., Ltd.

Daniel Wamwangi

Yoon-Ho Khang

Matthias Wuttig

Tae-Yon Lee

Dong-seok Suh

Ki-Joon Kim

Cheol-Kyu Kim

Dong-Seok Suh

Youn-seon Kang

Ki-joon Kim

A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Phase change material layers and phase change memory devices including the same

Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a GeSbTe(GST) material. The phase change material may be InSbTeSe. The index X of indium (In) is in the range of 25 wt %&#x2266;X&#x2266;60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %&#x2266;Y&#x2266;17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %&#x3c;Z&#x2266;75 wt %.

Doped phase change material and pram including the same

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Daniel Wamwangi