Basf Se Corporation

Wayne State University

Friedrich-Alexander-Universitat Erlangen-Nürnberg

Daniel Waldmann

Charles H Winter

Sabine Weiguny

David Dominique Schweinfurth

Lukas Mayr

Kyle Blakeney

Heiko B Weber

Michael Krieger

Stefan Hertel

Florian Krach

Johannes Jobst

Ingmar Bruder

Peter Erk

Wilfried Hermes

Sinja Verena Klenk

Nilanka Weerathunga Sirikkathuge

Tharindu Malawara Arachchige Nimanthaka Karunaratne

Charles Hartger Winter

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state 

Process for the generation of metal-containing films

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: 

Aluminum precursor and process for the generation of metal-containing films

The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (RNR)Me XXwherein Ris C-C-alkyl, Rare independently of one another hydrogen or C-C-alkyl, Me is a divalent metal, Xand Xhave different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.

Amorphous material and the use thereof

An electronic device () includes a semiconductor substrate () having a front surface (), a first electrode () and a second electrode () disposed on the front surface () of the substrate (), wherein the first electrode () and the second electrode () each have at least one epitaxial graphene monolayer (). The at least one epitaxial graphene monolayer () of the first electrode () forms an ohmic contact with the substrate () and the at least one epitaxial graphene monolayer () of the second electrode () forms a Schottky barrier with the substrate ().

Electronic device

A semiconductor component () comprising a semiconductor substrate () composed of silicon carbide and comprising separate electrodes () applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene () on silicon carbide, in such a way that a current channel is formed between the electrodes () through the semiconductor substrate ().

Semiconductor component

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Lambsheim, Germany

Daniel Waldmann