Scenterra, Inc.

Intel Corporation

Daniel W So

Kenneth Edward Salsman

Chan H Yoo

Chan Ho Yoo

A sensor that senses incident RF signals is provided. The sensor is capable of sensing signals in the Gigahertz (GHz) and Terahertz (THz) range. The sensor may utilize one or more cantilevers, an interferometer, or may be formed in a box-type configuration.

Sensor for detecting high frequency signals

A light-pipe array system is provided. The system comprises a light projector that projects light, and a light-pipe array. The light-pipe array comprises a plurality of light-pipes. Each light-pipe comprises a dielectric transparent to the light, and an electrically conductive light barrier layer surrounding the dielectric. The barrier layer guides the light from an entrance of the dielectric surrounded by the barrier layer to an exit of the dielectric surrounded by the barrier layer. Each light pipe also comprises a light-receiving element that increases throughput of the guided light transmitted within the barrier layer via the dielectric. In one embodiment, the light-receiving element comprises an electrical conductor positioned along a central longitudinal axis of the dielectric. In another embodiment, the light-receiving element alternatively comprises a focusing element. The guided light transmitted within the barrier layer via the dielectric is used in fabricating photosynthesized bio-materials such as, for example, oligonucleotides.

Light-pipe array system

A device for emission of high frequency signals is provided. The emission device is capable of emission of signals in the Gigahertz (GHz) and Terahertz (THz) range. The device may utilize, for example, a cantilever comprising a material that is capable of altering its electrical properties when flexed.

Device for emission of high frequency signals

Fabrication techniques for fabricating p-i-n structures that achieve a thin intrinsic layer and a small resistance across the p-i-n structure and thus a high response speed in a monolithically integrated circuit package. Germanium p-i-n structures may be fabricated over silicon or silicon-on-insulator substrates using silicon processing technologies.

Manufacturing of monolithically integrated pin structures

A tapered waveguide improves insertion loss occurring at the slab/waveguide interface of an optical array waveguide grating (AWG). The tapered waveguide has two segments. The first segment decreases from a first thickness, nearest the slab of the AWG to a second thickness moving away from the slab. The second segment has a substantially constant or uniform thickness equal to the second thickness of the first segment. The second segment may also have a swallowtail shape comprising a forked end having two sidewalls tapered back towards the first segment. Light that would otherwise be lost at the slab/waveguide interface is instead captured by the tapered waveguide which laterally channels the light back into the waveguides thus mitigating insertion loss.

Vertical taper waveguide

Optical gratings are fabricated on a scale that may be smaller than the resolution of the lithographic system used to generate the grating pattern. Parallel ridges are formed using lithographic techniques. A conformal deposition and anisotropic etch are then used to form sidewalls on the sides of the ridges. After removing the ridges, the remaining sidewalls are used as a mask to etch the substrate. Removing the sidewalls leaves the desired grating pattern, with a pitch spacing of one-half that of the original ridges.

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Palo Alto, CA, United States of America

Daniel W So