Texas Instruments Corporation

Lsi Logic Corporation

Lsi Corporation

Daniel W Prevedel

Richard W Arnold

Lester L Wilson

Weldon Beardain

Donald E Riley

Viswanathan Lakshmanan

Richard D Blinne

John D Corbeil, Jr

Michael Josephides

Robert W Davis

Jason K Hoff

Johathan P Kuppinger

An apparatus for testing a semiconductor die and the method wherein there is provided a package having a cavity therein with a plurality of terminals in the package disposed at the periphery of the cavity. A semiconductor die to be tested and having a plurality of bond pads thereon is disposed in the cavity and an interconnecting layer having electrically conductive paths thereon is also disposed in the cavity, each of the paths having first and second spaced apart regions thereon, the first region of each path being aligned with and contacting a bond pad. An interconnection is provided between the second spaced apart region of each of the paths and one of the plurality of terminals. The second spaced apart region of each of the paths is preferably a bump aligned with and contacting one of the plurality of terminals. A compliant layer is preferably disposed over the interconnecting layer and provides a force causing engagement of at least the first spaced apart regions and the bond pads. The first region is preferably a compliant bump probe tip having a first predetermined height above the layer and includes a standoff on the layer having a second predetermined height above the layer less than the first height.

Known good die using existing process infrastructure

A method of implementing an engineering change order includes steps of: (a) receiving as input an integrated circuit design; (b) receiving as input an engineering change order to the integrated circuit design; (c) creating at least one window in the integrated circuit design that encloses a change to the integrated circuit design introduced by the engineering change order wherein the window is bounded by coordinates that define an area that is less than an entire area of the integrated circuit design; (d) performing a routing of the integrated circuit design that excludes routing of any net that is not enclosed by the window; (e) replacing an area in a copy of the integrated circuit design that is bounded by the coordinates of the window with results of the incremental routing to generate a revised integrated circuit design; and (f) generating as output the revised integrated circuit design.

Method of implementing an engineering change order in an integrated circuit design by windows

A method and computer program product for parasitic extraction from a previously calculated capacitance solution include steps of: (a) receiving as input a design database for an integrated circuit design; (b) receiving as input a first set of operating conditions and a second set of operating conditions for the integrated circuit design; (c) calculating a first resistance solution and a single capacitance solution from the design database and the first set of operating conditions; (d) performing a parasitic extraction of the first resistance solution and the single capacitance solution to generate a first set of parasitic values; (e) calculating a second resistance solution from the design database and the second set of operating conditions; (f) performing a parasitic extraction of the second resistance solution and the single capacitance solution to generate a second set of parasitic values; and (g) generating as output the first set of parasitic values and the second set of parasitic values.

Method of parasitic extraction from a previously calculated capacitance solution

A method for detecting nets physically changed and electrically affected by a design ECO includes steps as follows. An ECO is executed on an IC design to produce a post-ECO IC design. A first group of nets of the IC design physically changed by the ECO is identified by comparing a pre-ECO database with a post-ECO database. A pre-ECO design SPEF file of the IC design is parsed with a script to identify a second group of nets in the pre-ECO database based on the first group of nets, the second group of nets being coupled to the first group of nets. The second group of nets is pre-ECO electrically affected nets. Parasitics for the first group of nets in the post-ECO database are extracted to generate a parasitic data file for the first group of nets. The parasitic data file is parsed with the script to identify a third group of nets in the post-ECO database based on the first group of nets, the third group of nets being coupled to the first group of nets. The third group of nets is post-ECO electrically affected nets. Finally, a file listing the first group of nets, the second group of nets and the third group of nets is generated.

Method and apparatus for detecting nets physically changed and electrically affected by design ECO

Method of testing a semiconductor chip

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Fort Collins, CO, United States of America

Daniel W Prevedel