Centre National De La Recherche Scientifique

Université De Technologie De Troyes

Université Pierre Et Marie Curie - Upmc

Cern, Organisation Européenne Pour La Recherche Nucléaire

Silsef

Daniel Turover

Michel Pons

Roland Madar

Francis Baillet

Ludovic Charpentier

Etienne Pernot

Didier Chaussende

Paul Lecoq

David Grosso

Gilles Lerondel

Loic Le Cunff

The invention concerns a device () for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber () containing a substrate () whereat is formed a polycrystalline source of said body and a monocrystalline germ () of said body; a second chamber (), said substrate being arranged between the two chambers; means for input () of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means () for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Formation of single-crystal silicon carbide

Growing community of inventors

Saint Mande, France

Daniel Turover