Borries Pte. Ltd.

Advanced Ion Beam Technology, Inc.

Hermes-epitek Corporation

Borrirs Pte. Ltd.

Daniel Tang

Zhongwei Chen

Liang-Fu Fan

Xiaoming Chen

Tzu-Shih Yen

Wei Fang

Hong Xiao

Zhimin Wan

Ching-I Li

Ger-Pin Lin

Tsungnan Cheng

Jason Hong

The present invention provides a backscattered electron (BSE) detector comprising two or more detection components that are electrically isolated from each other. Each of the detection components includes a single continuous top metal layer configured for directly receiving incident backscattered electrons and for backscattered electron to penetrate therethrough. The thickness of one of the top metal layers is different from the thickness of another one of the top metal layers. The BSE detector can be used in an apparatus of charged-particle beam for imaging a sample material. Signals from the detection components having top metal layers of different thicknesses can be inputted into different signal amplifier circuits to get different energy bands of BSE image.

Backscattered electron detector, apparatus of charged-particle beam such as electron microscope comprising the same, and method thereof

The present invention provides a MEMS sample holder comprising an observation section. The observation section includes a first layer, a second layer, and a sample compartment between the first layer and the second layer. The sample compartment is configured for filling a liquid sample and observing the liquid sample filled therewithin. The sample compartment has one, two or more windows through which an electron beam can pass. Each of the windows is formed on two cavities including a first cavity on the first layer and a second cavity on the second layer that is opposite to the first cavity across the sample compartment.

MEMS sample holder, packaged product thereof, and apparatus of charged-particle beam such as electron microscope using the same

The present invention provides an apparatus of charged-particle beam e.g. an electron microscope comprising a plasma generator for selectively cleaning BSE detector. In various embodiments, the plasma generator is located between a sample stage and a sample table having one or more openings or holes. The plasma generator generates plasma and distributes or dissipates the plasma through the openings of the sample table toward and onto surface of the BSE detector. Cleaning contaminants on the surface of the BSE detector frequently and selectively with in-situ generated plasma can prevent the detectors from performance deterioration such as losing resolution and contrast in imaging at high levels of magnification.

Apparatus of charged-particle beam such as scanning electron microscope comprising plasma generator, and method thereof

The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

Apparatus of electron beam comprising pinnacle limiting plate and method of reducing electron-electron interaction

A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.

Rapid and automatic virus imaging and analysis system as well as methods thereof

The present invention provides an apparatus of charged-particle beam e.g. an electron microscope comprising an in-column plasma generator for selectively cleaning BSE detector and BF/DF detector. The plasma generator is located between a lower pole piece of objective lens and the BF/DF detectors, but outside trajectory area of the charged-particles from the sample stage to the BF/DF detector.

Apparatus of charged-particle beam such as electron microscope comprising plasma generator, and method thereof

The present invention provides a driving system comprising two actuators for moving a stage through two elastic connectors; and a general apparatus/device comprising such a driving system, such as a machine tool, an analytical instrument, an optical microscope, and an apparatus of charged-particle beam such as electron microscope and an electron beam lithographical apparatus. When used in an electron microscope, the stage can be used as a specimen stage or a plate having apertures for electron beam to pass through. The novel stage driving system exhibits numerous technical merits such as simpler structure, better manufacturability, improved cost-effectiveness, and higher reliability, among others.

Stage driving system and apparatus or device such as apparatus of charged-particle beam comprising the same

The present invention provides a digital high-resolution detector for detecting X-ray, UV light or charged particles. In various embodiments, the digital detector comprises an array of CMOS or CCD pixels and a layer of conversion material on top of the array designed for converting incident X-ray, UV light or charged particles into photons for CMOS or CCD sensors to capture. The thin and high-resolution detector of the invention is particularly useful for monitoring and aligning beams in, and optimizing system performance of, an apparatus of charged-particle beam e.g. an electron microscope.

Digital detector, apparatus of charged-particle beam such as electron microscope comprising the same, and method thereof

The present invention provides an apparatus of charged-particle beam such as an electron microscope with co-condensers. A source of charged particles is configured to emit a beam of charged particles, and the co-condensers including two or more magnetic condensers are configured to coherently focus the beam to a single crossover spot. The invention exhibits numerous technical merits such as continuous image resolution tuning, and automatic switching between multiple resolutions, among others.

Apparatus of charged-particle beam such as electron microscope comprising co-condensers for continuous image resolution tuning

The present invention provides an electrode assembly comprising two or more electrodes arranged around a primary axis forming a non-cylindrical channel space. General electronic apparatus/device, particularly apparatus of charged-particle beam such as electron microscope, may use the electrode assembly to create an optimized pattern of electrical field within non-cylindrical channel space. When the electrode assembly is used as a beam deflector in a magnetic objective lens, the electrical field within the central channel space can be co-optimized with the magnetic field for reducing aberration(s) such as distortion, field curvature, astigmatism, and chromatic aberration, after the beam passes through the central channel space.

Electrode assembly, electronic apparatus/device using the same, and apparatus of charged-particle beam such as electron microscope using the same

The present invention provides an apparatus of charged-particle beam such as an electron microscope including a specimen table that can slide on a planar surface around the lower pole piece of the objective lens. The specimen table is confined in a specimen stage having one elastic protrusion and one or more elastic force receiving parts (e.g three permanent protrusions) that contact and press the table. When the specimen is under microscopic examination, disturbing vibration cannot generate a force sufficient to overcome the limiting friction between the specimen table and the planar surface of the objective lens. The invention exhibits numerous technical merits such as minimal or zero vibration noise, and improved image quality, among others.

Apparatus of charged-particle beam such as electron microscope comprising sliding specimen table within objective lens

In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.

Forming punch-through stopper regions in finFET devices

A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

Replacement source/drain finFET fabrication

In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.

Doping a non-planar semiconductor device

In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.

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Fremont, CA, United States of America

Daniel Tang