Pseudolithic, Inc.

USA As Represented by Secretary of the Navy

University of Illinois

Daniel Somerset Green

Florian Herrault

James F Buckwalter

Michael D Hodge

Justin Kim

Isaac Rivera

David J Meyer

Brian P Downey

Matthew J Gilbert

James Buckwaiter

Timothy M Philip

An electronic assembly has a host wafer having a first circuit including passive devices for the purpose of one of tuning or matching networks. Chiplets are placed in the cavities. At least one chiplet has a second circuit including at least one transistor or switch device and passive tuning circuits including at least one of a stabilization network, a gain boosting network, a power delivery network, or a low-noise network. Electrical interconnects between the chiplets and wafer electrically connect the first circuitry to the second circuitry.

Heterogeneous integration of radio frequency transistor chiplets having interconnection tuning circuits

An electronic assembly has a backside capping layer, a host wafer having a back surface bonded to a top surface of the backside capping layer except for cavities in the wafer formed over areas of the backside capping layer, the cavities having side surfaces of the wafer. Chiplets have backsides bonded directly to at least portion of the areas of the top surface of the backside capping layer. A lateral dielectric material between side surfaces of the chiplets and side surfaces of the wafer, mechano-chemically bonds the side surfaces of the chiplets to the side surfaces of the wafer.

Chip integration into cavities of a host wafer using lateral dielectric material bonding

An electronic assembly heterogeneously integrates radio-frequency (RF) transistor chiplets into a host wafer, and the chiplets have interconnections to host wafer circuits. The assembly has at least one RF transistor chiplet having a chiplet circuit including a high-electron-mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT). The host wafer has at least one host wafer circuit for the purpose of producing bias conditions that optimize performance of the HEMT or HBT. The host wafer circuit includes first circuitry to provide a DC bias of the HEMT or HBT; or second circuitry configured to sense radio-frequency operating conditions of the HEMT or HBT. The electrical interconnects are between the chiplet and the wafer, and electrically connect the host wafer circuit to the chiplet circuit.

Heterogeneous integration of radio frequency transistor chiplets having interconnections to host wafer circuits for optimizing operating conditions

An electronic assembly has a host wafer having a first circuit including wafer transistors and passive, non-transistor devices. Chiplets have a second circuit including at least one radio frequency (RF) transistor device. Electrical interconnects are between the chiplets and wafer. The electrical interconnects electrically connect the first circuit to the second circuits. Oscillators that have the wafer transistor, the RF transistor and the electrical interconnects produce a signal for built-in self-test circuits for testing an assembly design of the electronic assembly and speeds of the RF chiplet transistors.

Built in self-test of heterogeneous integrated radio frequency chiplets

Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.

Selective oxidation of transition metal nitride layers within compound semiconductor device structures

An electrical device includes a current transport layer made of an anomalous Hall material. The electrical device also includes a first ferromagnetic island in physical contact with the current transport layer and a second ferromagnetic island in physical contact with the current transport layer, the second ferromagnetic island oriented with respect to the first ferromagnetic island such as to concentrate a magnetic field, generated by current flow along a conducting surface of the anomalous Hall material, over the first ferromagnetic island and the second ferromagnetic island.

Growing community of inventors

McLean, VA, United States of America

Daniel Somerset Green