Advanced Micro Devices Corporation

Daniel Sobeck

Chi K Chang

Michael Van Buskirk

Janet S Y Wang

Narbeth Derhacobian

A method of erasing a memory cell that has a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains an initial amount of charge. The method includes applying a first voltage across the gate and the first region so that a first portion of the initial amount of charge is removed from the charge trapping region. Next, a second voltage is applied across the gate and the first region so that a second portion of the initial amount of charge is removed from the charge trapping region, wherein the second voltage is different than the first voltage.

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Portola Valley, CA, United States of America

Daniel Sobeck