Infineon Technologies Ag

Infineon Technologies Austria Ag

Daniel Schloegl

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Andreas Haertl

Christoph Weiss

Matthias Kuenle

Gerhard Schmidt

Frank Hille

Moriz Jelinek

Andre Rainer Stegner

Benedikt Stoib

Johannes Baumgartl

Christian Jaeger

Elmar Falck

Manfred Pfaffenlehner

Erwin Lercher

Johannes Georg Laven

André Rainer Stegner

Andre Brockmeier

Holger Schulze

Christian Krueger

Hans Peter Felsl

Oana Julia Spulber

Thomas Waechtler

Philipp Koch

Marcella Johanna Hartl

Roland Strasser

Bernd Bitnar

A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

Semiconductor device including a field stop region

A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.

Vertical power semiconductor device and manufacturing method

A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.

Vertical power semiconductor device including a field stop region having a plurality of impurity peaks

A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

Power semiconductor diode including field stop region

A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 10/cm; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Method for manufacturing a power semiconductor device having a reduced oxygen concentration

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.

Method for processing a semiconductor device and semiconductor device

A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region having a maximum dopant concentration of at least 0.5*10cmfor at least 70% of a total extension of the doped transition region in an extension direction and a maximal dopant concentration gradient of at most 3*10cm, wherein a lower subregion of the doped transition region is in contact with the contact region and has a maximum dopant concentration at least 100 times higher than a maximum dopant concentration of an upper subregion of the doped transition region; and creating a doped drift region on top of the upper subregion of the doped transition region, the doped drift region having a lower dopant concentration than the upper subregion of the doped transition region.

Method of manufacturing a power semiconductor device

A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1&#xd7;10cmand 5&#xd7;10cm.

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

Epitaxy troughs are formed in a semiconductor substrate, wherein a matrix section of the semiconductor substrate laterally separates the epitaxy troughs and comprises a first semiconductor material. Crystalline epitaxy regions of a second semiconductor material are formed in the epitaxy troughs, wherein the second semiconductor material differs from the first semiconductor material in at least one of porosity, impurity content or defect density. From the epitaxy regions at least main body portions of semiconductor bodies of the semiconductor devices are formed.

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z).

Producing a semiconductor device by epitaxial growth

A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1&#xd7;10cmand 5&#xd7;10cm. A device blocking voltage Vis defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Semiconductor device including undulated profile of net doping in a drift zone

A power semiconductor device has a semiconductor body configured to conduct a load current in parallel to an extension direction between first and second load terminals of the power semiconductor device. The semiconductor body includes a doped contact region electrically connected to the second load terminal, a doped drift region having a dopant concentration that is smaller than a dopant concentration of the contact region, and an epitaxially grown doped transition region separated from the second load terminal by the contact region and that couples the contact region to the drift region. An upper subregion of the transition region is in contact with the drift region, and a lower subregion of the transition region is in contact with the contact region. The transition region has a dopant concentration of at least 0.5*10cmfor at least 5% of the total extension of the transition region in the extension direction.

Power semiconductor device

A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

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Villach, Austria

Daniel Schloegl