Applied Materials, Inc.

Daniel Sang Byun

Rajinder Dhindsa

Kartik Ramaswamy

James Rogers

Valentin Nikolov Todorow

Leonid Dorf

Yue Guo

Olivier Luere

Linying Cui

Evgeny Kamenetskiy

Timothy Joseph Franklin

Vahid Firouzdor

Andreas Schmid

Sumanth Banda

Xue Chang

Dana Marie Lovell

Rohan Vijay Rane

Philip Allan Kraus

Michael D Willwerth

Phillip A Criminale

Leonard Michael Tedeschi

Stephen Donald Prouty

Denis M Koosau

Yaoling Pan

Patrick John Tae

Jaeyong Cho

Changhun Lee

Alvaro Garcia De Gorordo

Carlaton Wong

Andrew Antoine Noujaim

Jonathan Kolbeck

Keith Hernandez

An apparatus for processing substrates that includes a process chamber with a process volume and a conductance liner surrounding the process volume wherein the conductance liner has at least one fixed portion and a movable portion. The movable portion is configured to expose a substrate transfer slot in a wall of the process chamber. The apparatus also includes a lifting assembly with an actuator attached to the movable portion of the conductance liner. The lifting assembly is configured to move the movable portion of the conductance liner in a vertical direction to expose the substrate transfer slot.

Methods and apparatus for conductance liners in semiconductor process chambers

Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter within the first portion of the first synchronization waveform signal, and delivering a second burst of second voltage pulses to the electrode assembly after receiving a second portion of the first synchronization waveform signal, wherein the at least one first parameter of the first voltage pulses is set to a second value based on a difference in the first waveform parameter within the second portion of the first synchronization waveform signal.

Multi-shape voltage pulse trains for uniformity and etch profile tuning

Baffle for anti-rotation process kit for substrate processing chamber

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Plasma processing assembly using pulsed-voltage and radio-frequency power

Ring for an anti-rotation process kit for a substrate processing chamber

The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Sensors and system for in-situ edge ring erosion monitor

Embodiments of a process kit are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes: a ceramic ring having an upper surface and a lower surface, wherein the ceramic ring includes a chucking electrode disposed in the ceramic ring and a heating element disposed in the ceramic ring; and an edge ring disposed on the ceramic ring.

Sheath and temperature control of process kit

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Plasma processing using pulsed-voltage and radio-frequency power

Embodiments described herein relate to a substrate support assembly which enables adjustment of the thermal conductivity therein. The substrate support assembly has heater and cooling channel. An adjustable thermal break disposed between the heater and the cooling channel. The adjustable thermal break has one or more fluid conduits coupled thereto and configured to flow a fluid into and out of the adjustable thermal break for variant the thermal conductivity between the heater and the cooling channel.

Adjustable thermal break in a substrate support

Pulsed-voltage hardware assembly for use in a plasma processing system

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may have a thickness of about 5 nm to about 3 &#x3bc;m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

Plasma resistant coating of porous body by atomic layer deposition

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may comprise a solid solution of YO&#x2014;ZrOand may have a thickness of about 5 nm to about 3 &#x3bc;m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

Growing community of inventors

Campbell, CA, United States of America

Daniel Sang Byun