International Business Machines Corporation

Central Glass Company, Limited

Shin-etsu Chemical Co., Ltd.

Jsr Corporation

Globalfoundries Inc.

Az Electronic Materials (luxembourg) S.a.r.l.

The University of Mons-hainaut

Jsr Micro Inc.

Central Class Co., Ltd.

Daniel Sanders

Joy Cheng

James L Hedrick

Ratnam Sooriyakumaran

Linda Karin Sundberg

Hoa D Truong

Charles Thomas Rettner

Ho-Cheol Kim

Alshakim Nelson

Ankit Vora

Robert David Allen

Masaki Fujiwara

Rudy J Wojtecki

Dario Leonardo Goldfarb

Melia Tjio

Chi-Chun Liu

Manabu Yasumoto

David Robert Medeiros

Young-Hye Na

William Dinan Hinsberg

Kristin Schmidt

Yoshiharu Terui

Anindarupa Chunder

Matthew Earl Colburn

Wai-Kin Li

Nelson M Felix

Kafai Lai

Sean David Burns

Hiroshi Ito

Gregory Breyta

Phillip Joe Brock

Satoru Narizuka

Libor Vyklicky

Takehisa Ishimaru

Ekmini Anuja De Silva

Gregory Michael Wallraff

Teddie Peregrino Magbitang

Jed Walter Pitera

Martha Inez Sanchez

Da Yang

Daniel C Edelstein

Michael A Guillorn

Takeshi Nogami

Cyril Cabral, Jr

Tsutomu Ogihara

Takeru Watanabe

Satoshi Watanabe

Yann Mignot

Yoshio Kawai

Dirk Pfeiffer

Seiichiro Tachibana

Markus Brink

Daniel Gruhl

Chandrasekhar Narayan

Nathaniel H Park

Keiichi Masunaga

Daisuke Domon

Hsinyu Tsai

Alfredo Alba

Colin J Brodsky

Linda Ha Kato

Steven R Welch

Steven A Scheer

Hayato Namai

Chad Eric DeLuca

Luisa Dominica Bozano

Gurpreet Singh

Kazuki Fukushima

Dmitry Zubarev

Michael James Lercel

Keisuke Niida

Anna Lisa Gentile

Petar Ristoski

Takashi Sawamura

Alexander M Friz

Noel Arellano

Hiroko Nagai

Gregory S Doerk

Alexander Edward Hess

Steven J Holmes

Ali Afzali-Ardakani

George Stojan Tulevski

Indira P Seshadri

John Christopher Arnold

Stefan Harrer

Yukio Nishimura

Jing Guo

Geraud Jean-Michel Dubois

Guanyang Lin

Carl Eric Larson

Julia Elizabeth Rice

Alan C Thomas

Krystelle Lionti

Margareta Paunescu

Durairaj Baskaran

Orest Polishchuk

Robert Allen David

Geraud J M Dubois

Olivier Coulembier

Dirk Pfeifer

Candidate material for polymerization can be received. One or more desired features in the candidate material can be identified. A machine learning model can be trained to generate a new material having one or more of the desired features. Permissively, the candidate material can be determined from running a machine learning classification model that ranks a plurality of material as candidates. Permissively, the generated new material can be input to the machine learning classification model, for the machine learning classification model to include in ranking the plurality of material as candidates.

Expert-in-the-loop AI for materials generation

A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.

Expert-in-the-loop AI for materials discovery

Embodiments are disclosed for a method for generating a metal-oxide film. The method includes providing a metal ligand complex having a metal and a reactive moiety. The metal ligand complex is dissolved in a solvent that coats at least part of a substrate. Additionally, the method includes inducing a combustion process involving the metal ligand complex, in the absence of any additional fuel, to generate a film that is formed over at least part of the substrate. The film includes an oxide of the metal.

Generating metal-oxide film

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Multifunctional polymers

A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.

Self-priming resist for generic inorganic hardmasks

A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; 'p' is 1 or 2; 'q' is 1 or 2; &#x201c;r&#x201d; is 0 or 1; &#x201c;s&#x201d; is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Compound and composition for forming organic film

Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

Photoactive polymer brush materials and EUV patterning using the same

A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

Fabricating electrically nonconductive blocks using a polymer brush and a sequential infiltration synthesis process

An exemplary semiconductor wafer includes a lower sublayer of a first organic planarization layer (OPL) material; an upper sublayer of a second OPL material deposited onto the lower sublayer; and a detectable interface between the lower sublayer and the upper sublayer. The exemplary wafer is fabricated by depositing the lower sublayer; curing the lower sublayer; and after curing the lower sublayer, depositing the upper sublayer directly onto the lower sublayer.

Embedded etch rate reference layer for enhanced etch time precision

A compound includes two or more structures shown by the following general formula (1-1) in the molecule, 'Ar' represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Compound, method for manufacturing the compound, and composition for forming organic film

Negative-tone resist compositions and multifunctional polymers therein

The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain,wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z))is a junction group, which comprises a surface active pendant moiety Y(Z)wherein:

Block copolymers with surface-active junction groups, compositions and processes thereof

Block polymers are formed by ring opening polymerization (ROP) of a cyclic carbonate monomer using a polymeric initiator for the ROP that comprises repeating functionalized ethylene units. The block polymers are free of, or substantially free of, any polymer having a chemical structure that does not comprise the polymer backbone of the polymeric initiator. The block polymers are capable of directed self-assembly.

Methods of forming block polymers for directed self-assembly

A film layer comprising a high-chi (&#x3c7;) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Additives for orientation control of block copolymers

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers

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San Jose, CA, United States of America

Daniel Sanders