Contour Semiconductor, Inc.

Other

Hgst, Inc.

Western Digital Technologies, Inc.

Glimpse Waters, Inc.

N&uuml;p2 Incorporated

Nup2 Incorporated

Contour Seminconductor, Inc.

Daniel Robert Shepard

Mac D Apodaca

Thomas Michael Trent

Ward M Parkinson

James Juen Hsu

James E O'Toole

Thomas A Langdo

Britta Shepard

Arthur J Pitera

Sam Ira Young

Steven Jeffrey Grossman

The present invention relates to display means for systems for guiding a trailer while backing, and in particular to graphical display means to provide information to an operator who is steering, and controlling the accelerator and brakes by suggesting the amount of steering to apply to the towing vehicle to cause the trailer to be directed to where the operator wants the trailer to go.

Output device for trailer backing system

The present invention relates to entering data into a trailer backup guidance system. In particular, the present invention relates to storing data in the components of a trailer backup guidance system corresponding to a plurality of trailer and vehicle combinations to better facilitate sharing those components across a plurality of trailers and vehicles.

Multiple stored configuration sensors

The present disclosure generally relates to semiconductor manufactured memory devices and methods of manufacture thereof. More specifically, methods for forming a plurality of layers of a 3D cross-point memory array without the need for lithographic patterning at each layer are disclosed. The method includes depositing a patterned hard mask with a plurality of first trenches over a plurality of layers. Each of the plurality of first trenches is etched all the way through the plurality of layers. Then the hard mask is patterned with a plurality of second trenches, which runs orthogonal to the plurality of first trenches. Selective undercut etching is then used to remove each of the plurality of layers except the orthogonal metal layers from the plurality of second trenches, resulting in a 3D cross-point array with memory material only at the intersections of the orthogonal metal layers.

3D cross-point memory manufacturing process having limited lithography steps

The present disclosure generally relates to the fabrication of metal-oxide-semiconductor (MOS) select transistors in a vertical orientation such that the transistor pair fits within the footprint of a 4Fmemory cell. The present disclosure further relates to the simultaneous fabrication of a vertical stack of transistors in which each transistor is distinct, as opposed to being serially connected in a NAND-like string. An initial stack of materials is built to include silicon layers to act as source and drain regions as well as to serve as epitaxial growth seed points. As such, the transistor disclosed may be utilized in conjunction with memory elements such as Phase Change, Resistive, or Magnetic RAM memory within array designs, among others.

Method to fabricate discrete vertical transistors

The present disclosure generally relates to the fabrication of and methods for creating a reversible tri-state memory device which provides both forward and reverse write and read drive to a bi-directional RRAM cell, thus allowing writing in the forward and reverse directions. The memory device, however, utilizes a single transistor 'on pitch' which fits between two metal lines traversing the array tile.

Bi-directional RRAM decoder-driver

The present invention relates to display means for systems for guiding a trailer while backing, and in particular to graphical display means to provide information to an operator who is steering, and controlling the accelerator and breaks by suggesting the amount of steering to apply to the towing vehicle to cause the trailer to be directed to where the operator wants the trailer to go.

Trailer backing up system accessories

The present disclosure generally relates to non-volatile memory arrays and memory devices in which a leakage current through an OTS is utilized to pre-charge a circuit of a memory chip. By running an additional wire on each side of a tile which is orthogonal to, above, or below the X and Y select wires, a high value resistance material, such as an OTS, may be deposited at the intersection. The OTS allows the word line or bit line to be selected without pulling excessive leakage to the select wire from the bias voltage, such as V/2. A thickness of the OTS is adjusted such that the Vof the OTS is greater than V/2, with margin, and the OTS does not turn on when the OTS is selected. A resistance is created between the V/2 wire and the word line select wire or the bit line select wire.

Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects

The present disclosure generally relates to a memory cell and methods for generating a pulse within the memory cell. As such, a geometric arrangement of transistors is disclosed that allows the transistor pulse signal generator circuit to precharge both sides of the memory cell and, subsequently, bring opposite sides of the memory cell quickly to different voltages. The circuit and wiring fabrication provided, when combined with a related transistor manufacturing process, yields pulse generating logic at the memory cell to enable the formation of a well-defined pulse while fitting within the 4Ffootprint of the memory cell. As such, the speed and pulse shape requirements of PCM, MRAM, other such cross-point memory technologies, sensor arrays, and/or pixel displays may take advantage of the reduced RC circuitry delays.

Memory cell located pulse generator

The present invention is a guidance computing system used by the driver of a vehicle towing a trailer while backing-up that rapidly calculates and predicts the direction in which the tow vehicle and trailer will become generally in-line for a given position of the steering wheel, thereby enabling the use of slower, lower cost microcomputers. This is accomplished by using a predetermined table, based on a baseline trailer of known length, having a measure of turning as one of its axes; such an axis is necessary to facilitate ratiometric scaling to convert table values to correspond to any length trailer. In a specially equipped vehicle incorporating servomechanisms to enable the vehicle to steer itself, the driver indicates the direction desired for the trailer to travel. The present invention also predicts left and right path limits for controlling the direction of the trailer when maneuvering complex paths.

Trailer backing up device and table based method

The present invention relates to sensors for guiding a trailer while backing that can easily be installed or removed, and in particular to trailering system sensors that can be utilized for both measuring the angle formed by the vehicle and a coupled trailer (i.e., the angle formed by the centerline of the vehicle intersecting the centerline of the trailer) and the direction and/or distance to back up the vehicle during coupling. The present invention is a means and a method for sensing both the hitch angle during towing maneuvers and the direction and/or distance to the trailer to assist a driver to couple a vehicle and trailer together.

Dual purpose hitch sensor

In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.

Solid state devices having fine pitch structures

Embodiments of the present disclosure generally relate to data storage systems, and more particularly, to a SHE-MRAM device. The SHE-MRAM device includes a memory cell array having a plurality of first leads, a plurality of second leads, and a plurality of memory cells disposed between the plurality of first leads and the plurality of second leads. The second leads are made of a material having large spin orbit interactions and high electrical resistivity. The SHE-MRAM device further includes a periphery circuitry having multiple pairs of transistors. The multiple pairs of transistors reduce the length a current has to flow through a second lead of the plurality of second leads. By limiting the distance a current can flow through the second lead, applying excessive voltage to the second lead is avoided.

MTJ memory array subgrouping method and related drive circuitry

The present disclosure generally relates to fine geometry electrical circuits and methods of manufacture thereof. More specifically, methods for forming 3D cross-point memory arrays using a single nano-imprint lithography step and no photolithography are disclosed. The method includes imprinting a multilevel topography pattern, transferring the multilevel topography pattern to a substrate, filling the etched multilevel topography pattern with hard mask material, planarizing the hard mask material to expose a first portion of the substrate, etching a first trench in the first portion of the substrate, depositing a first plurality of layers in the first trench, planarizing the hard mask material to expose a second portion of the substrate, etching a second trench in the second portion of the substrate and depositing a second plurality of layers in the second trench. The method is repeated until a 4F3D cross-point memory array has been formed.

Nano-imprinted self-aligned multi-level processing method

Trailer guidance systems require sensors for detecting the hitch angle and the turning radius and output means for displaying the intended trailer destination. However, most vehicles do not have integral turning sensors and most trailers and/or hitches do not have integral hitch angle sensors. The present invention is a system for guiding a trailer while backing that can easily be installed or removed.

Growing community of inventors

North Hampton, NH, United States of America

Daniel Robert Shepard