USA As Represented by Secretary of the Navy

Daniel R Queen

Xiao Liu

Thomas H Metcalf

Qi Wang

William Michael Nemeth

Battogtokh Jugdersuren

Frances Hellman

Glenn Jernigan

Matthew R Abernathy

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

CVD nanocrystalline silicon thermoelectric material

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cmand a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having T=400&#xb0; C. under a vacuum pressure of 1&#xd7;10Torr.

Hydrogen-free amorphous dielectric insulating thin films with no tunneling states

CVD nanocrystalline silicon as thermoelectric material

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Silver Spring, MD, United States of America

Daniel R Queen