National Research Council of Canada

Daniel Poitras

Zhenguo Lu

Philip J Poole

Jiaren Liu

Sylvain Raymond

Pedro Barrios

Siegfried Janz

Jerzy A Dobrowolski

Dan-Xia Xu

Trevor Mischki

Li Li

Adam Densmore

Jens Schmid

Jean Lapointe

Greg Lopinski

Philip Waldron

Bill Sinclair

Pedro Barriors

Philip Poole

A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.

Grating-based evanescent field molecular sensor using a thin silicon waveguide layer

A multi-band (multi-color) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.

Multi-band multiwavelength quantum dot mode-locked lasers

An organic light emitting device consists of a layered structure including a top multilayer stack, a bottom multilayer stack, a cavity layer between the top multilayer stack and the bottom multilayer stack, and an organic light emitting region within the cavity layer. The layered structure is constructed such that the product of phase factors &#x3be;and &#x3be;is. greater than 80% at the center of at least one emitting wavelength region and for a normal viewing angle, wherein where Rand Rare the reflectance of the top and bottom multilayer stacks respectively, &#x3c6;and &#x3c6;are the phase changes on reflection for the top and bottom multilayer stacks respectively, &#x3b1;&#x3b2;are respectively the real and imaginary parts of the phase thickness of the cavity layer, &#x3b1;and &#x3b2;are respectively the real and imaginary parts of the phase thickness of the light-emitting region at the operating wavelength of the device, x is the mean distance of light emitting region from the bottom multilayer stack, n and k are the refractive index and absorption coefficient of the cavity layer, &#x3b8;is the emitting angle inside the cavity layer, and d is the physical thickness of said cavity layer. This condition improves the light output efficiency of the device.

High performance light-emitting devices

Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.

Quantum dot based semiconductor waveguide devices

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Ottawa, Canada

Daniel Poitras