Analog Devices,inc.

International Business Machines Corporation

Massachusetts Institute of Technology

Daniel Piedra

Puneet Srivastava

Kenneth Flanders

Andrew Proudman

Denis Michael Murphy

Leslie P Green

Peter R Stubler

Devendra K Sadana

William Joseph Gallagher

Ko-Tao Lee

Tomas Apostol Palacios

Marinus Johannes Petrus Hopstaken

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Aluminum-based gallium nitride integrated circuits

Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

Modification of electric fields of compound semiconductor devices

Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.

Electric field management in semiconductor devices

Gallium nitride integrated circuits including non-gold-based metallic materials

A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

Gallium nitride and silicon carbide hybrid power device

A semiconductor device having a back-side field plate includes a buffer layer that includes a first compound semiconductor material, where the buffer layer is epitaxial to a crystalline substrate. The semiconductor device also includes field plate layer that is disposed on a surface of the buffer layer. The semiconductor device further includes a first channel layer disposed over the field plate layer, where the first channel layer includes the first compound semiconductor material. The semiconductor device further includes a region comprising a two-dimensional electron gas, where the two-dimensional electron gas is formed at an interface between the first channel layer and a second channel layer. The semiconductor device additionally includes a back-side field plate that is formed by a region of the field plate layer and is electrically isolated from other regions of the field plate layer.

Field managed group III-V field effect device with epitaxial back-side field plate

A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer, and gallium nitride layer such as a carbon-doped gallium nitride layer are successively deposited within the recessed regions. Improved current collapse response of the GaN device is attributed to maximum length and width dimensions of the multilayer stack.

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Cambridge, MA, United States of America

Daniel Piedra