Lam Research Corporation

Daniel Peter

Yang Pan

Samantha SiamHwa Tan

Da Li

Jengyi Yu

Samantha Siamhwa Tan

Younghee Lee

Wenbing Yang

Boris Volosskiy

Timothy William Weidman

Yiwen Fan

Reza Arghavani

Jun Xue

Alexander Kabansky

Jeffrey S Marks

Patrick A Van Cleemput

Richard Alan Gottscho

Samantha S H Tan

Nader Shamma

Katie Lynn Nardi

Mohand Brouri

Ji Yeon Kim

Yuanhui Li

Arunima Deya Balan

Hongxiang Zhao

Michelle Margarita Flores Espinosa

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Photoresist development with halide chemistries

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an Oflash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Integration of dry development and etch processes for EUV patterning in a single process chamber

A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.

Selective etch using deposition of a metalloid or metal containing hardmask

A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.

Selective etch using a sacrificial mask

A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Selectively etching for nanowires

A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.

Deposition of self assembled monolayer for enabling selective deposition and etch

A method for patterning a substrate including multiple layers using a sulfur-based mask includes providing a substrate including a first layer and a second layer arranged on the first layer. The first layer includes a material selected from a group consisting of germanium, silicon germanium and type III/V materials. The method includes depositing a mask layer including sulfur species on sidewalls of the first layer and the second layer by exposing the substrate to a first wet chemistry. The method includes removing the mask layer on the sidewalls of the second layer while not completely removing the mask layer on the sidewalls of the first layer by exposing the substrate to a second wet chemistry. The method includes selectively etching the second layer relative to the first layer and the mask layer on the sidewalls of the first layer by exposing the substrate to a third wet chemistry.

Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask

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Campbell, CA, United States of America

Daniel Peter