American Telephone & Telegraph Co., At&t Bell Laboratories

At&t Bell Laboratories

Bell Telephone Laboratories

Daniel P Wilt

Wilbur D Johnston, Jr

Judith A Long

Robert F Karlicek, Jr

Ralph A Logan

Henryk Temkin

William C Dautremont-Smith

Gerald J Dolan

Joshua Degani

Paul R Besomi

High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Method of controlling dopant incorporation in high resistivity In-based

The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru or Rh). DFP-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.

Preservation of surface features on semiconductor surfaces

High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Semiconductor devices employing high resistivity in-based compound group

The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru and Rh). DFB-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.

A buried-heterostructure distributed feedback laser is described, including a grating structure at a surface of a nonplanar cladding layer. The grating structure can be made by transfer of a pattern by ion milling, the pattern being defined in an ion-beam resist layer, e.g., by direct-writing electron-beam exposure. Low-threshold, high-power lasers are obtained with a commercially favorable yield.

Method of making a nonplanar buried-heterostructure distributed-feedback

High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

Semiconductor devices employing Fe-doped MOCVD InP-based layer for

V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.

Fabrication of grooved semiconductor devices

Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

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Scotch Plains, NJ, United States of America

Daniel P Wilt