General Electric Company

Globalfoundries Inc.

Daniel P Smith

Vimal Kumar Kamineni

Luke G England

Chellappa Balan

Michael John Bowman

Sukeshwar Kannan

Charles Max Byrd

Himani Suhag Kamineni

Maxwell Lippitt

William Dwight Gerstler

Mehmet Arik

Todd Garrett Wetzel

Warren F Bessler

Somnath Ghosh

Zhiguo Sun

John Brian McDermott

Robert D Lillquist

Kenneth A Darrow

Shiro G Kimura

Roger Allen Shisler

Hung-Wei Liu

Tanya Andreeva Atanasova

Daniel Fisher

Craig W Horneck

Kumarapuram Gopalakrishnan

An integrated circuit product includes a substrate, an interlayer dielectric (ILD) material positioned above the substrate and a through-substrate-via (TSV) extending continuously through the substrate and the ILD material. The TSV includes a substrate portion of the TSV that is positioned in and extends continuously through the substrate and an ILD portion of the TSV that is positioned in and extends continuously through the ILD. An insulating liner layer is selectively positioned between and separates the substrate portion of the TSV and the substrate, wherein the selectively positioned insulating liner layer does not extend from the substrate to the ILD material.

Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device

One method includes positioning a front side of a first substrate opposite a side of a second substrate, the first substrate comprising an ESD mitigation structure located at an approximate center of the front side, the second substrate comprising at least one TSV structure that extends through the side of the second substrate, the first substrate and the second substrates adapted to be positioned so as to result in the conductive coupling of the at least one TSV structure and the ESD mitigation structure, bending the first substrate to an initial contact position such that an initial engagement between the first substrate and the second substrate will result in conductively coupling between the ESD mitigation structure and the TSV structure, and engaging the first and second substrates with one another such that the ESD mitigation structure and the TSV structure are conductively coupled to one another.

Methods and structures for mitigating ESD during wafer bonding

Device structures for a metal-insulator-metal (MIM) capacitor, as well as methods of fabricating a device structure for a MIM capacitor. An active device level is formed on a substrate, a local interconnect level is formed on the active device level, and a metal-insulator-metal capacitor is formed in a via opening with a sidewall extending through the local interconnect level and the active device level to a given depth in the substrate. The metal-insulator-metal capacitor includes a first plate on the sidewall, a second plate, and an interplate dielectric between the first plate and the second plate.

Deep trench metal-insulator-metal capacitors

One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.

Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device

Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer.

Methods of protecting a dielectric mask layer and related semiconductor devices

A system and method for producing electricity is described. The system comprises a fuel cell assembly. The system may comprise a steam turbine and a generator. The fuel cell assembly may be used to provide heat to produce the steam used to power the steam turbine. The system may comprise a gasifier that is operable to produce a fuel for use in the fuel cell assembly. The system may comprise an air separation unit that is operable to supply oxygen to the gasifier and to the fuel cell assembly for reaction with the fuel. The oxygen that is not reacted in the fuel cell assembly may be recirculated through the fuel cell assembly. Spent fuel from the fuel cell assembly may be recirculated through the fuel cell assembly. A carbon dioxide removal system may be used to remove carbon dioxide from the fuel upstream of the fuel cell.

Integrated power plant and system and method incorporating the same

A technique is disclosed for a system and method for combined production of power and hydrogen utilizing the heat from a first working fluid heated by a geothermal energy source using a steam generator and an electrolyzer designed to receive the steam produced by the steam generator for the production of hydrogen and oxygen using electrolysis.

System and method for production of hydrogen

A turbomachinery system for cooling a high power density device includes a turbomachine configured to deliver a high flux cooling medium toward the high power density device, a housing containing a motor, a compressor, or both, of the turbomachine, a heat exchanger in fluid communication with the turbomachine and arranged for being thermally coupled to the high power density device, and a transition duct arranged intermediate the heat exchanger and turbomachine.

Method and system for cooling high power density devices

The present invention is directed to a method for reducing PCB concentration in an electrical induction apparatus containing a dielectric fluid with greater than 500 ppm PCB to a level of less than about 50 ppm PCB. Dielectric fluid containing greater than 500 ppm PCB is drained from an electrical induction apparatus, and the drained apparatus then is filled with tetrachloroethylene as a first interim dielectric fluid. The apparatus is then electrically operated with the first interim dielectric fluid so as to attain about an equilibrium PCB concentration in the first fluid. The first interim dielectric fluid then is drained from the apparatus and replaced with fresh tetrachloroethylene as a second interim dielectric fluid. The apparatus then is electrically operated with the second interim dielectric fluid so as to attain about an equilibrium PCB concentration in the second fluid. The second interim dielectric fluid then is drained from the apparatus and replaced with a silicone fluid as a permanent dielectric fluid. The apparatus filled with permanent dielectric fluid is electrically operated and the permanent dielectric fluid is filtered through a carbon filter, so as to attain a PCB concentration in the permanent fluid of less than about 50 ppm.

Method for reclassifying PCB transformers

A scanning infrared display system capable of variable magnification and high spatial resolution measures the emitted infrared radiation caused by the scanning of a highly collimated energy source beam on the surface to be imaged. The resulting infrared emissions are collected with a high sensivity stationary detector. The display image is formed on a CRT by scanning the object with a raster pattern in synchronization with the CRT and modulating the Z axis CRT potential (brightness) with the infrared detection signal.

Stimulated scanning infrared imaging system

A flexible, low porosity airfoil skin is described which includes multilayer flexible, annealed metallic mesh members consisting of two or three such members selected from the class consisting of nickel, Monel alloy, and stainless steel, the members having a mesh size from 60 to 100, the members interlocked mechanically, and the skin having a thickness reduction in the range from 2.5 to 3.0. Such a flexible, low porosity airfoil skin is useful as a covering structure and is particularly useful as a skin or as a substrate for a cooled non-linear airfoil-shaped body, such as a turbine or compressor blade.

Growing community of inventors

Ballston Spa, NY, United States of America

Daniel P Smith