Texas Instruments Corporation

Samsung Electronics Co., Ltd.

Daniel Nelson Carothers

Jeffrey R Debord

Benjamin Stassen Cook

Roberto Giampiero Massolini

Titash Rakshit

Stephen John Fedigan

Rajarshi Mukhopadhyay

A heterogeneous semiconductor structure, including a first integrated circuit and a second integrated circuit, the second integrated circuit being a photonic integrated circuit. The heterogeneous semiconductor structure may be fabricated by bonding a multi-layer source die, in a flip-chip manner, to the first integrated circuit, removing the substrate of the source die, and fabricating one or more components on the source die, using etch and/or deposition processes, to form the second integrated circuit. The second integrated circuit may include components fabricated from cubic phase gallium nitride compounds, and configured to operate at wavelengths shorter than 450 nm.

Heterogeneous integrated circuit for short wavelengths

In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

Semiconductor substrate with integrated inductive component

A method for providing a vertical optical via for a semiconductor substrate is described. The semiconductor substrate has a front surface and a back side. A hard mask having an aperture therein is formed on the front surface. Part of the semiconductor substrate exposed by the aperture is removed to form a via hole. The via hole has a width not exceeding one hundred micrometers and a bottom. Cladding layer(s) and core layer(s) are provided in the via hole. The core layer(s) have at least a second index of refraction greater than that of the core layer(s). A portion of the semiconductor substrate including the back side is removed to expose a bottom portion of the core layer(s) and a bottom surface of the semiconductor substrate. The vertical optical via includes the cladding and core layers. The vertical optical via extends from the front surface to the bottom surface.

Vertical optical via and method of fabrication

An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Isolated semiconductor layer over buried isolation layer

A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Compact chip scale LIDAR solution

An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

Semiconductor die with back-side integrated inductive component

An apparatus for a beam steering device includes a rotator constituting a cylindrical body extending along an axis and defining a central passage therethrough. A wedge-shaped prism is secured to the body within the central passage. The prism has a first surface extending perpendicular to the axis and a second surface extending transverse to the axis. A drive member is provided on one of an axial end surface and a radially outer surface of the body for rotating the rotator. An encoder member is provided on the same surface of the body as the drive member for tracking the position of the rotator.

Compact rotator and method for making a beam steering device

An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation

An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

A beam steering device includes a housing and a transceiver that emits and receives light beams through at least one opening in the housing. A rotator includes a cylindrical body rotatably mounted within the housing axially between the transceiver and the at least one opening. A wedge-shaped prism is secured within the body and includes a first surface extending perpendicular to the axis and a second surface extending transverse to the axis. An encoder member and a drive member are provided on an outer surface of the body. Sensors are mounted to the housing to sense the encoder member and provide an encoder signal indicative of a rotational position of the prism about the axis. At least one drive element is mounted to the housing and applies force to the drive member to rotate the body and prism about the axis for steering light beams propagating through the prism.

Growing community of inventors

Lucas, TX, United States of America

Daniel Nelson Carothers