Merck Patent Gmbh

University of California

Novellus Systems Incorporated

Daniel Moser

Charles Dezelah

Joby Eldo

Ravi Kanjolia

Ming Fang

Ravindra Kanjolia

Andrew C Kummel

Mansour Moinpour

Adrien LaVoie

Rajesh Odedra

Jacob Woodruff

Mark Saly

Charith Nanayakkara

Mark C Potyen

Ravi Konjolia

SeongUk Yun

Cheng-Hsuan Kuo

Shawn Sungeun Hong

Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Compounds and methods for selectively forming metal-containing films

Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Metal complexes containing cyclopentadienyl ligands

A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

Method of plasma activated deposition of a conformal film on a substrate surface

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Manitowoc, WI, United States of America

Daniel Moser