Navitas Semiconductor Limited

International Rectifier Corporation

Fairchild Semiconductor Corporation

Siliconix Technology C. V.

Daniel Marvin Kinzer

Santosh Sharma

Ju Jason Zhang

Thomas J Ribarich

Marco Giandalia

Srikant Sridevan

Victor Sinow

Jason Zhang

Chuan Cheah

Kyle A Spring

Hongwei Jia

Dean E Probst

Joseph Andrew Yedinak

Chung-Lin Wu

Ashok Challa

Oseob Jeon

Adam I Amali

Tao Liu

Christopher Davis

Robert A Beach

Mark Pavier

Alexander Lidow

Tim Sammon

Kenneth Wagers

Bharat Shivkumar

Donald He

Jorge Munoz

Ritu Sodhi

Ren Huei Tzeng

Steven Paul Sapp

Jianjun Cao

Daniel S Calafut

Ling Ma

Janardhanan S Ajit

Maria Cristina Estacio

Bruce Douglas Marchant

Ahmad Ashrafzadeh

Naresh Thapar

Davide Chiola

Kohji Andoh

Ashita Mirchandani

Justin N Chiang

Siddharth Kiyawat

Vijay Ullal

Matthew Anthony Topp

George Chu

Charles Bailley

Maher J Hamdan

Michael M Dube

Michael A Briere

Thomas E Grebs

Gary M Dolny

Bruno Charles Nadd

Paul Bridger

David Paul Jones

Bigildis Dosdos

Perry L Merrill

Zhijun Qu

Aram Arzumanyan

Pil Sung Park

Ying Xiao

Bigidis Dosdos

Jung Hee Lee

Nazanin Amani

He Zhi

Jorge Munos

Saed Sobhani

Weizuo Zhang

Monolithic high side GaN-based circuits using capacitors for level shifting. In one aspect, a power converter includes a GaN-based die, a switch formed on the GaN-based die and having a gate terminal, where the switch is arranged to be selectively conductive according to a driver signal applied to the gate terminal, a buffer circuit formed on the GaN-based die and arranged to receive an input signal and generate a corresponding differential output signal at a first output terminal and at a second output terminal, and a voltage level converter formed on the GaN-based die and having a first input terminal coupled to the first output terminal via a first capacitor and having a second input terminal coupled to the second output terminal via a second capacitor, where the first and second capacitors are formed on the GaN-based die, and the voltage level converter is arranged to generate the driver signal.

Monolithic high side gallium nitride device with integrated capacitive level shifter circuits

Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

Transistor DV/DT control circuit

An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

Circuits and methods for controlling a voltage of a semiconductor substrate

An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Integrated half-bridge power converter

Thermally enhanced electronic packages for GaN power integrated circuits

A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Integrated gallium nitride power device with protection circuits

An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.

Electronic packages with integral heat spreaders

An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Integrated power device with energy harvesting gate driver

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Half-bridge circuit using monolithic flip-chip GaN power devices

Pulsed level shift and inverter circuits for GaN devices

A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

Bootstrap power supply circuit

Growing community of inventors

El Segundo, CA, United States of America

Daniel Marvin Kinzer