Agere Systems Inc.

At&t Bell Laboratories

Daniel Mark Wroge

Seungmoo Choi

William Thomas Cochran

Min-Liang Chen

Stephen Arlon Meisner

Chung W Leung

Che Choi Leung

Cheryl Anne Bollinger

Gerard Zaneski

David Averill Bell

Processor-implemented techniques for verifying ESD device connectivity in an IC include the steps of: receiving an input dataset including layout parameters corresponding to the integrated circuit; identifying ESD devices based at least in part on the input dataset; extracting devices and parasitic elements in at least a portion of the integrated circuit based at least in part on the input dataset; generating a file including connectivity information and dimensional characteristics for extracted devices and parasitic elements associated with at least the identified ESD devices in the integrated circuit; identifying at least one ESD test based on the identified ESD devices and on connectivity to the identified ESD devices; and performing a linear network analysis for each identified ESD test based at least in part on the file.

Electrostatic discharge device verification in an integrated circuit

A method for manufacturing a semiconductor wafer uses a reticle having a plurality of spaced apart circuit images of identical patterns or images of a common level of a single integrated circuit formed on the reticle and arranged in columns and rows about its central point. At least one column of spaced apart test images are formed outside of and adjacent an outermost column of circuit images. Radiation is projected through the reticle for exposing the patterns on the reticle onto an underlying wafer. A reticle holder having a pair of shutter elements aligned parallel to the columns of images selectively blocks the projection of radiation through the columns of the test images but are exposed in order to form test circuits on the wafer at selected locations.

Multiple purpose reticle layout for selective printing of test circuits

When making CMOS logic circuits, for example an inverter, it is frequently necessary to connect the sources of the p and n channel transistors to their respective tubs (n and p, respectively). The prior art required either a large contact window covering both source and tub regions, or else two standard size contact windows. The present technique forms the tub tie connection by the use of the same silicide layer that is formed on the source/drain regions, which typically also forms a gate silicide in the self-aligned silicide (i.e., 'salicide') process. A conventional window may then be used to connect the silicide tub tie (and hence the source/tub regions) to a power supply conductor. A space saving is obtained, and increased freedom for placing the power supply contact window is obtained.

Integrated circuit with improved tub tie

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Allentown, PA, United States of America

Daniel Mark Wroge