Taiwan Semiconductor Manufacturing Comp. Ltd.

Daniel M Y Yang

Yan-Hong Liu

Che-fu Chen

Che-Fu Chen

A method includes: transferring a wafer from a factory interface through a load lock chamber to a buffer chamber; transferring the wafer from the buffer chamber to a process chamber; etching the wafer in the process chamber, to remove a material of the wafer; and after the wafer is etched, performing reflectance measurements to the wafer in the factory interface, the load lock chamber, the buffer chamber, or combination thereof, to identify if the material of the wafer is removed entirely according to a reflectance of the wafer.

Wafer processing method

A system includes a factory interface, an etching tool, and at least one measuring device. The factory interface is configured to carry a wafer. The etching tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the etching tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of reflectance from the wafer that is carried in the factory interface or the etching tool.

Reflectance measurement system and method thereof

In an embodiment, a system includes: an orientation sensor configured to detect an orientation fiducial on a bevel of a wafer; a pedestal configured to rotate the wafer to allow the orientation sensor to detect the orientation fiducial and place the orientation fiducial at a predetermined orientation position; and a defect sensor configured to detect a wafer defect along a surface of the wafer while rotated by the pedestal.

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Hsin-Chu, Taiwan

Daniel M Y Yang