Watkins- Johnson Company

Candescent Technologies Corporation

Silicon Valley Group, Thermal Systems Llp

Semiconductor Equipment Group, LLC

Trielectrix

Canon Kabushiki Kaisha

Aviza Technology Limited

Daniel M Dobkin

Adam Q Miller

Christopher J Spindt

Wilbur C Krusell

Duane A Haven

Paul N Ludwig

Jose F Casillas

James P Garcia

Frederick F Walker

A deposition chamber for delivering gases to a substrate or wafer for processing of said substrate or wafer is provided. The injector is provided comprising an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of first elongated passages formed therein for received a gas. Also formed within the member are a number of thin distribution channels which extend between the first elongated passages and the gas delivery surface. In another embodiment, the injector further includes at least one second elongated passage formed therein for receiving an etchant species. Metering tubes may be inserted into each elongated passage and are spaced from the walls of said passages and extend between the ends. The deposition chamber includes at least one injector as described above; a plurality of vent blocks having end surfaces and at least one elongated external surface extending along the length of each of the vent blocks; and a support positioned beneath the injector and vent blocks, creating a deposition region there between. The vent blocks are positioned adjacent one on each side of the injector, and spaced from the injector to define exhaust channels there between for removing the gas.

Single body injector and deposition chamber

A single body injector for delivering gases to a surface is provided. The injector is comprised of an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of elongated passages formed therein. Also formed within the member are a number of thin distribution channels which extend between the elongated passages and the gas delivery surface. In another embodiment of the invention a number of metering tubes may be inserted into each elongated passage and are spaced from the walls of the passages and extend between the ends. Gases are conveyed to the elongated passages, through the distribution channels to the gas delivery surface where they are directed to a desired region where they mix, react and form a uniform thin film on the substrate positioned beneath the injector. The gas delivery surface is comprised of rounded side regions and a center recessed region in which instance the thin distribution channels extend between the first elongated passages and the center recessed region of the gas delivery surface. In another embodiment, the injector further contains an elongated passage for receiving an etchant species. The etchant species is conveyed to the gas delivery surface via a distribution channel which extends between the elongated passage and the rounded side regions of the gas delivery surface. The etchant species is distributed along the gas delivery surface where it removes deposited materials along the gas delivery surface and other surfaces within the chamber.

Single body injector and method for delivering gases to a surface

A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

Fabrication of gated electron-emitting device utilizing distributed

A method and apparatus for accurately characterizing the electron density and distribution of a confined plasma on the basis of high-frequency, broadband electromagnetic measurements is disclosed herein. The technique involves noninvasive, broadband measurement of electromagnetic transmission through a plasma. In one implementation, multivariate analysis techniques are employed to correlate features of the resultant spectra with plasma characteristics such as electron density or electron distribution. Alternately, such techniques are used to correlate the resultant spectra with parameters relating to conditions under which the plasma is generated. More specifically, the quantitative plasma characterization technique involves generating a set of broadband calibration spectra by measuring transmission of electromagnetic energy through a calibration plasma. Each broadband calibration spectrum is obtained using a different set of reference parameters being related to predefined quantitative characteristics. The reference parameters may comprise known values of quantitative characteristics of the calibration plasma including, for example, electron distribution or electron density. Alternately, the reference parameters may comprise known values of operating conditions within the chamber bearing a predetermined empirical relationship to particular plasma quantitative characteristics. A reference parameter transformation, which relates measured spectra of electromagnetic energy transmitted through the calibration plasma to values of the reference parameters, is derived on the basis of the broadband calibration spectra. A test spectrum is then obtained by measuring transmission of electromagnetic energy through a subject plasma. Values of the predefined quantitative characteristics of the subject plasma are then determined by analyzing the test spectrum using the reference parameter transformation.

Method and apparatus for characterizing a plasma using broadband

The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.

Method of characterizing group III-V epitaxial semiconductor wafers

A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.

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Sunnyvale, CA, United States of America

Daniel M Dobkin