Centre National De La Recherche Scientifique

Electricite De France

Commissariat a L'energie Atomique

Total Sa

Université Pierre Et Marie Curie (Paris 6)

Electricite De France - Service National

Paris Sciences Et Lettres-Quartier Latin

Riber

Institut Photovoltaique D'ile De France (Ipvf)

Electricité De France—edf

Centre National De La Recherche Scientifique-Cnrs

Université Pierre Et Marie Curie

Electricité De France, Société Anonyme

Daniel Lincot

Jean-François Guillemoles

Denis Guimard

Pierre-Philippe Grand

Stéphane Taunier

Jean-Luc Pelouard

Myriam Paire

Florian Proise

Elisabeth Chassaing

Laurent Lombez

Stephane Collin

Stéphane Collin

Sophie Peulon

Jacques Vedel

Pierre Cowache

Moëz Ben-Farah

Michel Mahe

Olivier Kerrec

Hélène Herview, Legal Representative

Renée Mongellaz, Legal Representative

Francois Mongellaz

Negar Naghavi

Nicolas Loones

Gregory Savidand

Sebastien Jutteau

Martine Mongellaz, Legal Representative

Stèphane Taunier

Pierre Philippe Grand

Fabien Tsin

Jean Rousset

Serena Gallanti

Moez Ben-Farah

Stephane Taunier

Zacharie Jehl

Fabrication of a double-sided photovoltaic cell, with two opposite active surfaces, comprising a step of depositing, on each active surface, at least one electric contact. The deposition step comprises in particular a shared operation of depositing on each of the active surfaces, implemented by electrolysis in a shared electrolysis tank comprising: a first compartment for depositing a metal layer on a first active surface of the cell, for fabrication of a contact comprising said metal layer on the first active surface; and a second compartment for depositing, by oxidation, a metal oxide conductor layer on the second active surface of the cell, for the fabrication of a contact comprising said metal oxide layer on the second active surface.

Contacts for a photovoltaic cell with two active surfaces

The present invention relates to a multi-layer material comprising an assembly of layers, called 'front layers', capable of forming a front photovoltaic cell, and an assembly of layers, called 'rear layers', capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

Tandem photovoltaic cell

A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Photovoltaic device and associated fabrication method

A method and device for electrodeposition in cylindrical geometry. A method for electrochemically depositing a thin layer on a flexible substrate, comprising: providing, in an electrolysis bath, a first closed cylinder in a second hollow cylinder, applying the flexible substrate to one of the surfaces chosen from the outer surface of the first cylinder and the inner surface of the second, the flexible substrate forming a first electrode, providing, in the electrolysis bath, a second electrode, and applying a potential difference between the first electrode and the second electrode in order to electrodeposit the thin layer on the flexible substrate.

Method and device for electroplating in cylindrical geometry

A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Method for fabricating a photosensitive device

A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.

Photovoltaic component with a high conversion efficiency

A method for preparing an A-B-Cor A-(D,E)-Cabsorber thin film for photovoltaic cells where 0&#x2266;x&#x2266;1, A is an element or mixture of elements selected within Group 11, B is an element or mixture of elements selected within Group 13, C is an element or mixture of elements selected within Group 16, D is an element or mixture of elements selected within Group 12, and E is an element or mixture of elements selected within Group 14. Said method includes: a step of electrochemically depositing oxide from elements selected from among Groups 11, 12, 13, and 14, a step of annealing in a reducing atmosphere, and a step of supplying an element from Group 16.

Method for preparing an absorber thin film for photovoltaic cells

The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VItype, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VIwhich is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VIalloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Sulfurization and selenization of electrodeposited CIGS films by thermal annealing

The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film

The invention relates to a method for making an imagery device comprising at least one matrix of pixels made of a photon detecting semiconducting material (), deposited on a substrate in which electronic devices are integrated and with metallic surfaces (), in which a material capable of improving bond of the semiconducting material is deposited on the metallic surfaces () only of this substrate before the semiconducting material () is deposited on the said substrate.

Method for producing an imaging device

The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI&#x3c;SB&#x3e;Y&#x3c;/SB&#x3e; compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

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The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

Process for preparing a film of an oxide or a hydroxide of an element of

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Antony, France

Daniel Lincot