Other

Bell Telephone Laboratories

At&t Bell Laboratories

Omnivision Technologies, Inc.

American Telephone & Telegraph Co., At&t Bell Laboratories

At&t Technologies, Inc.

Hitachi Kokusai Electric Co., Ltd.

Daniel L Flamm

Vincent Michael Donnelly, Jr

Dale E Ibbotson

John A Mucha

John P Verboncoeur

Joel M Cook

Dan Maydan

Wayne L Johnson

Jizhang Shan

Edwin Arthur Chandross

David N Wang

Alan M Lovelace

Guansong Liu

Louis Thomas Manzione

Hui Pan

Theodore J Wydeven

Larry F Thompson

Robert L Barns

Chorng-Ping Chang

Robert F Karlicek, Jr

Shimao Yoneyama

Jess Jan Young Lee

Georgy K Vinogradov

Bernard C Seiler

Edward H Mayer

A method and system for minimizing the effects of image motion in still cameras is provided. In one embodiment, a method of capturing an image in a digital camera is presented. The method includes calculating a sharpness value related to an image input. The method also includes evaluating the sharpness value to determine image motion. The method further includes capturing a next image input data from the image input responsive to evaluating the sharpness value.

Image anti-shake in digital cameras

The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.

Multi-temperature processing

A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of currents to phase and inverse-phase capacitive coupled voltages from the inductive coupling structure can be selectively maintained.

Process depending on plasma discharges sustained by inductive coupling

A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.

A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.

Process optimization in gas phase dry etching

Plasma etching and deposition is accomplished utilizing a helical resonator constructed with an inner diameter coil greater than 60 percent of the outer shield diameter. The diameter of the conductor used to form the coil is not critical and can be less than 40 percent of the winding pitch in some applications. These parameters permit helical resonator plasma sources to be more compact and economical, and facilitate improved uniformity for processing large substrates.

Processes depending on plasma discharges sustained in a helical resonator

Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.

Devices and process for producing devices containing silicon nitride

Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.

Processes depending on plasma generation using a helical resonator

The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effects are avoided. The downstream apparatus utilizes a discharge region that is relatively large compared to the volume occupied by the substrates. Additionally, the concentration of the etchant species in the effluent is maintained at a level that is of the same order as that produced in the discharge region.

Downstream apparatus and technique

A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.

Etching techniques

Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.

Crystallographic etching of III-V semiconductor materials

A method for accurately monitoring and adjusting gas phase processes such as gas etching and chemical vapor deposition has been found. This method relies on the use of induced fluorescence. The gaseous phase used in the process to be monitored is probed by excitation with a suitable energy source. The emission from the gas phase induced through this excitation is then monitored and yields an accurate measure of concentration of the active species present. In turn the conditions of the fabrication process are adjusted based on these discerned concentrations.

Growing community of inventors

Chatham Township, NJ, United States of America

Daniel L Flamm