Infineon Technologies Ag

Daniel Kraft

Francisco Javier Santos Rodriguez

Paul Ganitzer

Carsten Von Koblinski

Friedrich Kroener

Oliver Hellmund

Martin Sporn

Ralf Otremba

Alexander Komposch

Stefan Woehlert

Hannes Eder

A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.

Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements

A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.

Device and method including a soldering process

A semiconductor chip () is provided having an adhesion-promoting-layer-free three-layer metallization (). The three-layer metallization () has an aluminum layer () applied directly on the semiconductor chip (), a diffusion barrier layer () applied directly on the aluminum layer (), and a solder layer () applied directly on the diffusion barrier layer (). Ti, Ni, Pt or Cr is provided as the diffusion barrier layer () and a diffusion solder layer is provided as the solder layer (). All three layers are applied by sputtering in a process sequence.

Semiconductor chip, semiconductor device and methods for producing the same

Growing community of inventors

Klagenfurt-Viktring, Austria

Daniel Kraft