International Business Machines Corporation

Daniel Joseph Dawson

Gregory Breyta

Richard Anthony Dipietro

Phillip Joe Brock

James L Hedrick

Robert Dennis Miller

Craig Jon Hawker

Hiroshi Ito

Gregory Michael Wallraff

Richard Anthony DiPietro

Kenneth Raymond Carter

Do Yeung Yoon

Wayne Martin Moreau

Carl Eric Larson

Thomas H Baum

Jeffrey Donald Gelorme

Robert Lavin Wood

Willi Volksen

Jeffrey Curtis Hedrick

Ranee W Kwong

Harbans S Sachdev

Carlton G Willson

Ali Afzali-ardakani

Ajay Prabhakar Giri

Alfred Floyd Renaldo

Victor Y Lee

Hiroyuki Hiraoka

Ronald Anthony DellaGuardia

Leo L Linehan

Elwood Herbert Macy

Peter A Agostino

Premlatha J Jagannathan

Randolph J Smith

Stanley E Perreault

Andrew Robert Eckert

Thomas Carl Clarke

Ronald P Esch

David Paul Merritt

Kathleen H Martinek

Moahmoud Mostafa Khojasteh

Charlotte R DeWan

The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted &#x3b1;,&#x3b2;-unsaturated esters. The fluoroalkanol-substituted &#x3b1;,&#x3b2;-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

Precursors to fluoroalkanol-containing olefin monomers, and associated methods of synthesis and use

A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Arand Arare independently selected from monocyclic aryl and monocyclic heteroaryl, Rand Rmay be the same or different, and have the structure &#x2014;X&#x2014;Rwhere X is O or S and Ris C-Chydrocarbyl or heteroatom-containing C-Chydrocarbyl, and Rand Rare independently selected from the group consisting of hydrogen and &#x2014;X&#x2014;R, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar, Ar, or Ris O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Photoresists for visible light imaging

Percursors to fluoroalkanol-containing olefin monomers, and associated methods of synthesis and use

A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Arand Arare independently selected from monocyclic aryl and monocyclic heteroaryl, Rand Rmay be the same or different, and have the structure &#x2014;X&#x2014;Rwhere X is O or S and Ris C-Chydrocarbyl or heteroatom-containing C-Chydrocarbyl, and Rand Rare independently selected from the group consisting of hydrogen and &#x2014;X&#x2014;R, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar, Ar, or Ris O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Precursors to fluoroalkanol-containing olefin monomers and associated methods of synthesis and use

A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than nm, including nm, nm and nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Lithographic photoresist composition and process for its use

An antireflective composition includes a polyphenolic polymer which has a first repeating unit and a second repeating unit of the formula:

Antireflective polymer and method of use

A process for the stoichiometric carbonation of a hydroxyaromatic material is provided which comprises the steps of (a) mixing together in a reaction vessel (1) a hydroxyaromatic material, (2) a sufficient amount of a dialkyl dicarbonate to give the desired degree of substitution, (3) a catalytic amount of an unhindered tertiary amine, and (4) a solvent, (b) stirring the reaction mixture, (c) precipitating the alkyl carbonate of the hydroxyaromatic material, and (d) recovering the alkyl carbonate of the hydroxyaromatic material.

Process for forming carbonates of hydroxyaromatic compounds

The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polyarylene ether.

Process for manufacture of integrated circuit device using a matrix

Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

Photo acid generator compounds, photo resists, and method for improving

Growing community of inventors

San Jose, CA, United States of America

Daniel Joseph Dawson