Element Six Technologies Limited

Element Six Gmbh

Other

Princeton University

Diamond Microwave Devices Limited

Daniel James Twitchen

Geoffrey Alan Scarsbrook

Philip Maurice Martineau

Matthew Lee Markham

Andrew John Whitehead

Sarah Louise Geoghegan

Neil Perkins

Ian Friel

Christopher John Howard Wort

Clive Edward Hall

Harpreet Kaur Dhillon

Rizwan Uddin Ahmad Khan

Herman Philip Godfried

John Lloyd Collins

Evert Pieter Houwman

Andrew Michael Bennett

Michael Andrew Cooper

Wilhelmus Gertruda Maria Nelissen

Bärbel Susanne Charlotte Dorn

Barbel Susanne Dorn

Joseph Michael Dodson

Ricardo Simon Sussmann

Barbel Susanne Charlotte Dorn

Yevgeny Vasilievich Anoikin

Rizwan Uddin Khan

John Robert Brandon

Paul Martyn Spear

Jonathan James Wilman

Steven Edward Coe

Stephen David Williams

Hendrikus Gerardus Maria DeWit

Katharine Louise Atkinson

Florin Udrea

Gehan Anil Joseph Amaratunga

Nalin L Rupesinghe

Michael Peter Gaukroger

Andrew Mark Edmonds

Mark Robin McClymont

Nicholas Matthew Davies

Erhard Kohn

Michael Cooper

Christopher Wort

Stephen A Lyon

Robert Charles Burns

Keith Barry Guy

Alastair Douglas Stacey

Nathalie De Leon

Julian James Sargood Ellis

Martin Hermann Hans Kuball

John Olaf Hansen

Grant Charles Summerton

Ronald Hanson

Jeremy Suhail Rashid

Alexander Clark Muhr

Timothy Patrick Gerard Addison

Simon Craig Lawson

Fedor Jelezko

Zi-Huai Zhang

Ding Huang

Sorawis Sangtawesin

Brendon C Rose

Katharine Robertson

Rizwan Khan

Alexei M Tyryshkin

Srikanth Srinivasan

Christopher John Wort

Jaswinder Singh Gill

Hannes Bernien

Wilhemus Gertruda Maria Nelissen

Julian Anaya Calvo

Yevgeny Vasilievich YeAnoikin

Mihai Brezeanu

Antonella Tajani

Michael Schwitters

Ricardo Simon Sussman

Helen Jennifer Gallon

Nalin Lalith Rupesinghe

Andrew Michael Cooper

Wilhelmus Gertruda Nelissen

Alastair Stacey

Bärbel Susanne Cha Dorn

Mihai Department Of Engineering Brezeanu

Jeremy Suhail Dept Of Engineering Uni Rashid

A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.

Methods of fabricating synthetic diamond materials using microwave plasma activated chemical vapour deposition techniques and products obtained using said methods

Disclosed are synthetic diamond materials for quantum and optical applications, such as quantum information processing, quantum key distribution, quantum repeaters, and quantum sensing devices, based on spin defects in diamond. This includes methods for synthesizing and treating diamond in order to create spin defects with improved spin coherence and optical emission properties, as well as treating the diamond to eliminate unwanted defects that degrade these properties.

Synthetic engineered diamond materials with spin impurities and methods of making the same

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10cm. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

Method of manufacture of single crystal synthetic diamond material

A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their defect composition and colour, wherein defect type, defect concentration, and layer thickness for each of the at least two sets of layers is such that if the coloured single crystal CVD diamond material is fabricated into a round brilliant cut diamond comprising a table and a culet, and having a table to culet depth greater than 1 mm, the round brilliant cut diamond comprises a uniform colour as viewed by naked human eye under standard ambient viewing conditions in at least a direction through the table to the culet.

Single crystal chemical vapor deposited synthetic diamond materials having uniform color

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10cm. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900&#xb0; C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

Microwave plasma reactor for manufacturing synthetic diamond material

There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm&#xd7;1.3 mm and measured using a pixel size of area in a range 1&#xd7;1 &#x3bc;mto 20&#xd7;20 &#x3bc;m, a maximum value of &#x394;ndoes not exceed 1.5&#xd7;10for the one or more regions of low optical birefringence, where &#x394;nis an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, &#x394;nis greater than 1.5&#xd7;10and less than 3&#xd7;10; and is wherein every 1.3 mm&#xd7;1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.

Single crystal synthetic diamond material via chemical vapour deposition

A synthetic diamond heat spreader that includes a first layer of synthetic diamond material forming a base support layer and a second layer of synthetic diamond material disposed on the first layer of synthetic diamond material and forming a diamond surface layer. The diamond surface layer has a thickness equal to or less than a thickness of the base support layer. The diamond surface layer has a nitrogen content less than that of the base support layer. The nitrogen content of the diamond surface layer and the diamond support layer is selected such that the thermal conductivity of the base support layer is in a range 1000 W/mK to 1800 W/mK and the thermal conductivity of the surface support layer is in a range 1900 W/mK to 2800 W/mK.

Synthetic diamond heat spreaders

A single crystal CVD diamond component comprising: a surface, wherein at least a portion of said surface is formed of as-grown growth face single crystal CVD diamond material which has not been polished or etched and which has a surface roughness Rof no more than 100 nm; and a layer of NVdefects, said layer of NVdefects being disposed within 1 &#x3bc;m of the surface, said layer of NVdefects having a thickness of no more than 500 nm, and said layer of NVdefects having a concentration of NVdefects of at least 10NV/cm.

Diamond components for quantum imaging, sensing and information processing devices

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

Optical quality diamond material

An optical element includes a synthetic diamond material and an optical surface pattern formed directly in at least one surface of the synthetic diamond material. The optical surface pattern includes a plurality of projections separated by trenches, the projections spaced apart with a periodicity d. The periodicity d is between 65 and 99% of a zeroeth order diffraction limit above which non zeroeth diffraction orders are observed at an operating wavelength &#x3bb;. The optical surface pattern has a fill fraction in a range 0.1 to 0.6, the fill fraction defined as [area of projection in one periodic unit]/[area of the periodic unit]. The optical element has an absorption coefficient measured at room temperature of &#x2264;0.2 cm-1 at a wavelength of 10.6 &#x3bc;m.

Synthetic diamond optical elements

A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

Method of fabricating a plurality of single crystal CVD synthetic diamonds

The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.

Synthetic CVD diamond

Bonding scheme for diamond components which has low thermal barrier resistance in high power density applications

Growing community of inventors

Sunningdale, United Kingdom

Daniel James Twitchen