Semitool, Inc.

Applied Materials, Inc.

Exabyte Corporation

Other

Daniel J Woodruff

Kyle Moran Hanson

Randy Harris

Gregory J Wilson

Paul R McHugh

Vladimir Zila

James J Erickson

Thomas H Oberlitner

John M Pedersen

LinLin Chen

Robert W Berner

Robert B Moore

Wayne J Schmidt

Mark Dix

Ludovic Godet

Srinivas D Nemani

Douglas A Buchberger, Jr

Qiwei Liang

Viachslav Babayan

Nolan Layne Zimmerman

Steve L Eudy

Kevin W Coyle

Daniel W Hoekstra

Matthew C Egloff

Steven L Peace

Robert W Batz, Jr

Martin C Bleck

Erik Lund

Worm Lund

Paul Zachary Wirth

Marvin L Bernt

Thomas J Studebaker

John F Ellis

Jason A Rye

Bruce L Younglove

Douglas W Carr

David P Mattson

Vlad Zila

Curtis A Weber

James T Kuechmann

Thomas W Volckhausen

Christopher L Scott

Nigel Stewart

Todd J Egan

John Lee Klocke

Thomas Lee Ritzdorf

Jeffry Alan Davis

Edward W Budiarto

Abraham Ravid

Daniel P Bexten

Jeffrey I Turner

Jeremy Alan Willey

David Silvetti

Bridger Earl Hoerner

Robert O Miller

Tim McGlenn

Timothy A Anderson

Klaus H Pfeifer

Matthew Herset

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Method and apparatus for post exposure processing of photoresist wafers

In a processing system for electroplating semiconductor wafers and similar substrates, the contact ring of the electroplating processor is removed from the rotor of the processor and replaced with a previously deplated contact ring. This allows the contact ring to be deplated in ring service module of the system, while the processor continues to operate. Wafer throughput is improved. The contact ring may be attached to a chuck for moving the contact ring between the processors and the ring service module, with the chuck quickly attachable and releasable to the rotor.

Microelectronic substrate electro processing system

Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.

Electroplating dynamic edge control

An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Electroplating tool with feedback of metal thickness distribution and correction

An electroplating processor includes a base having a vessel body. A membrane assembly including a membrane housing is attached to a membrane plate. A membrane is provided on a membrane support attached to the membrane housing. An anode assembly includes an anode cup and one or more anodes in the anode cup. An anode plate is attached to the anode cup. Two or more posts on a first side of the anode plate are engageable with post fittings on the membrane plate. Latches on a second side of the anode plate are engageable with and releasable from a latch fitting on the membrane plate. The anode assembly is quickly and easily removable from the processor for maintenance, without disturbing or removing other components of the processor.

Electroplating apparatus

A plating apparatus includes a vessel for holding a bath of plating liquid. A head is adapted to hold a work piece, such as a silicon wafer, in the vessel, with a seal on the head sealing against the work piece. A component cleaner assembly may be used to automatically clean a component of the plating apparatus, such as a seal or a contact ring. The cleaner assembly has a component contactor, such as a brush, on an arm. An arm actuator is linked to the arm for moving the arm from a retracted position, to a deployed position, where the contactor is in physical contact with the component. A method for cleaning a component of a plating apparatus includes moving a scrubber or contactor into contact with the component and applying a cleaning liquid onto the component adjacent to the contactor.

Component cleaning in a metal plating apparatus

An electroplating processor includes a thin lower membrane support for supporting a membrane. The lower membrane support may be provided as a flexible plastic sheet having a pattern of through-openings. The through-openings may be aligned with openings in a rigid upper membrane support. The perimeter of the lower membrane may be clamped in the same perimeter seal as used to clamp and seal the perimeter of the membrane. The lower membrane support supports the membrane without adding significantly to the overall height of the processor. The processor can be stacked in a two level processing system without requiring additional clean room space.

Electroplating processor with thin membrane support

An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

Electroplating processor with geometric electrolyte flow path

A process chamber for processing semi-conductor wafers. The chamber includes at least one rotor within the process chamber. The rotor is adapted to receive and/or process semi-conductor wafers. The top of the process chamber also includes a tiltable rim. This rim tilts from a non-inclined position to an inclined position. The wafers may be loaded into and unloaded from the process chamber when the rim is in its inclined position.

Single workpiece processing chamber

An electroplating apparatus having improved contact deplating features includes a bowl assembly having a bowl for holding an electroplating solution. A head having a rotor including a contact ring and a head motor for rotating the rotor cooperates with the bowl assembly during plating operations. A lift/rotate actuator may be used to move the head to position a sector of the contact ring in a ring slot or opening of a deplating module. Since the deplating is performed within the deplating module, and not within the bowl assembly, the electroplating solution in the bowl assembly is not affected by the deplating process.

Deplating contacts in an electrochemical plating apparatus

Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.

Apparatus and methods for electrochemical processing of microfeature wafers

Single workpiece processing chamber with tilting load/unload upper rim

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Kalispell, MT, United States of America

Daniel J Woodruff