Advanced Technology Materials, Inc.

USA As Represented by Secretary of the Navy

Daniel J Vestyck

Peter C Van Buskirk

Steven M Bilodeau

Michael W Russell

Thomas H Baum

Jeffrey F Roeder

Stephen T Johnston

Scott Robert Summerfelt

Chongying Xu

Theodore Sidney Moise

Alexander S Borovik

James E Butler

Abigail Ebbing

John L Giuliani, Jr

Vasgen A Shamamian

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &#x3bc;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10to about 10&#x3bc;m. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

An organosilicon precursor for vapor deposition, e.g., low pressure (&#x3c;100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of:

Ethyleneoxide-silane and bridged silane precursors for forming low k films

A method of preventing oxygen deficiency in a ferroelectric or high &#x3b5; film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high &#x3b5; film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO.

Oxidative top electrode deposition process, and microelectronic device structure

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10,to about 10,&mgr;m,. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

A sealed, metal oxide, electrodeless discharge lamp having a high emission ntensity in the visible 400-700 nm range. Within the sealed container assembly of the lamp there is a source of metal atoms capable of forming a volatile oxide and a source of an oxygen containing gas. The lamp produces a plasma and volatilizes the metal into the plasma. Preferably the lamp is at a low pressure of about 20-40 torr and the metals are molybdenum or tungsten. Power is applied by inductively coupled electromagnetic radiation. A regenerative agent such as a halogen is added for recycling any deposited metal into the gas phase and to form a volatile compound with the source of metal atoms. The agent lowers the temperatures needed to volatilize the metal into the plasma. The lamp is operated by first providing energy at a low level to initiate the plasma and then supplying the metal atoms into the plasma.

Metal oxide discharge lamp

The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.

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Danbury, CT, United States of America

Daniel J Vestyck