Gte Laboratories Incorporated

University of Massachusetts

Daniel J Sandman

Boris S Elman

Sukant K Tripathy

Mrinal Thakur

Christopher S Velazquez

Norman J Geddes

Lewis A Acampora

James C Stark

William G Parker

John R Sambles

James L Foley

Polydiacetylenes prepared from 2,4-hexadiyne monomers substituted with at least one side chain component, exhibit an absorption maximum wavelength maximum greater than that exhibited by polydiacetylenes formed from 1,6-di-N-carbazolyl 2,4-hexadiyne. Preferably, the polydiacetylenes exhibit an absorption maximum that is in the range of visible light. Examples of suitable side chain components of the polydiacetylenes include cyanovinyl aromatic substituents and quinoid substituents. The polydiacetylenes exhibit useful third order nonlinear optical behavior for electromagnetic radiation in the visible and near-infrared electromagnetic wavelength range and can be formed by thermally-based synthesis methods.

Polydiacetylenes exhibiting extended wavelength absorption maxima

A method for fabricating a microelectronic device of the metal/insulator/metal' type wherein the insulator is an organic material, and a device fabricated thereby. A first electrically conductive lead is conductively adhered to a first portion of a conductive substrate. A monomolecular layer of highly pure p-dodecyloxyphenylcarbamate of 2-(2'-hydroxyethoxy)-5-bromo-7,7,8,8-tetracyanoquinodimethan is deposited on a surface of a second portion of the conductive substrate not including the first portion to form an organic film. Molecules of the monomolecular layer are generally disposed normal to the substrate surface with their dodecyl terminal moieties adjacent the surface. An essentially oxide-free contiguous layer of magnesium is deposited on the organic film. The deposition if performed at a temperature below about 15.degree. C. A layer of silver is deposited on the magnesium layer to substantially cover and conductively adhere to the magnesium layer. A second electrically conductive lead means is conductively adhered to the silver layer by means of a gallium-indium eutectic alloy. The device exhibits rectifying behavior on application of large voltages. Multilayer devices having an odd number of organic film layers, as well as methods for fabricating such multilayer devices, are also described.

M-I-M' device and fabrication method

A method for fabricating a microelectronic device of the metal/insulator/metal' type wherein the insulator is an organic material, and a device fabricated thereby. A first electrically conductive lead is conductively adhered to a first portion of a conductive substrate. A monomolecular layer of highly pure p-dodecyloxyphenylcarbamate of 2-(2'-hydroxyethoxy)-5-bromo-7,7,8,8-tetracyanoquinodimethan is deposited on a surface of a second portion of the conductive substrate not including the first portion to form an organic film. Molecules of the monomolecular layer are generally disposed normal to the substrate surface with their dodecyl terminal moieties adjacent the surface. An essentially oxide-free contiguous layer of magnesium is deposited on the organic film. The deposition is performed at a temperature below about 15.degree. C. A layer of silver is deposited on the magnesium layer to substantially cover and conductively adhere to the magnesium layer. A second electrically conductive lead means is conductively adhered to the silver layer by means of a gallium-indium eutectic alloy. The device exhibits rectifying behavior on application of large voltages. Multilayer devices having an odd number of organic film layers, as well as methods for fabricating such multilayer devices, are also described.

A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula:

Methods for the preparation of thin large-area single crystals of

This invention constitutes a method for preparing molecular and polymeric aromatic selenide compounds such as bis-phenyl selenide and poly(p-phenylene selenide). The method comprises reacting an aryl halide with an alkali metal selenide reagent formed in an aprotic solvent.

Aromatic selenium compound polymer

Crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least two bromine atoms per repeat unit is disclosed. The crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by a Fourier transform infrared spectrum which includes absorption at 795.+-.5, 835.+-.5, and 865.+-.5 cm.sup.-1. A method for preparing the crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is also disclosed.

Chemical modification of polydiacetylene crystals

Chemical modification of crystalline poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne is disclosed. There is provided a chlorinated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 12 chlorine atoms per repeat unit. The chlorinated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by a Fourier transform infrared (FTIR) spectrum including peaks at about 745.+-.5, 798.+-.5, and 851.+-.5 cm.sup.-1. There is also provided a nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 2 nitro groups per repeat unit. The nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by an FTIR spectrum including absorption at about 1511.+-.5, 1342.+-.5, 794.+-.5, 751.+-.5, and 718.+-.5 cm.sup.-1.

Chemical modification of solid, fully crystalline polydiacetylenes

Chemical modification of crystalline poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne is disclosed. There is provided a chlorinated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 12 chlorine atoms per repeat unit. The chlorinated poly-1,6-di(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by a Fourier transform infrared (FTIR) spectrum including peaks at about 745.+-.5, 798.+-.5, and 851.+-.5 cm.sup.-1. There is also provided a nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 2 nitro groups per repeat unit. The nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by an FTIR spectrum including absorption at about 1511.+-.5, 1342.+-.5, 794.+-.5, 751.+-.5, and 718.+-.5 cm.sup.-1.

Methods for preparing thin large-area single crystals of diacetylenes and polydiacetylenes having surface dimensions greater than or equal to about 0.1 mm on all sides and a uniform thickness less than or equal to about 100 microns. The methods involve forming a liquid layer, preferably by melting crystals of a pure diacetylene monomer between two opposed surfaces, one surface being movable with respect to the other; applying pressure to the molten monomer layer disposed between the two surfaces; shearing the molten layer by sliding the movable surface in a single direction that is in a straight line across the molten monomer layer while keeping the molten monomer layer under constant pressure; and crystallizing the shorn molten monomer layer while the shorn molten monomer layer is kept under constant pressure to form a thin large-area single crystal of pure diacetylene monomer. The method for preparing thin large-area single crystals of polydiacetylene further involves exposing a surface of the thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form a thin large-area single crystal of polydiacetylene.

Methods for the preparation of oriented thin large-area single crystals

Method for the preparation of thin large-area single crystals of

Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1.times.10.sup.13 ions/cm.sup.2 to about 1.times.10.sup.17 ions/cm.sup.2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.

Ion implanted polydiacetylenes

This invention constitutes a method of preparing molecular and supramolecular aromatic organic telluride, ditelluride, diselenide and selenide compounds from aromatic halogen compounds which are unactivated toward nucleophilic substitution. The method involves the reaction of an aromatic halide with an alkali metal telluride, ditelluride, selenide or diselenide reagent formed from chalcogen and alkali metal trialkylborohydride to yield the corresponding molecular or polymeric aromatic telluride, ditelluride, selenide or diselenide. Further, the alkali metal chalcogenide reagent prepared from alkali metal trialkylborohydrides may also be used to synthesize molecular and polymeric olefinic tellurides and selenides from olefinic halides unactivated toward nucleophilic substitution.

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Acton, MA, United States of America

Daniel J Sandman