Microchem Inc.

Kayaku Advanced Materials, Inc.

Other

Daniel J Nawrocki

Jeremy V Golden

William D Weber

Rodney J Hurditch

David W Minsek

Nao Honda

Donald W Johnson

Milton O Bernal

Yasumasa Akatsuka

Katie Han

Qingzhou Cui

Mark J Shaw

The present invention is directed to a permanent epoxy photoresist composition useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more epoxy resins according to Formulas I-VI, (B) one or more cationic photoinitiators; (C) one or more film casting solvents; and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed composition.

Epoxy formulations and processes for fabrication of relief patterns on low surface energy substrates

Disclosed and claimed herein are photoimageable dielectric compositions for dielectric passivation layers, dielectric protection layers as well as dielectric redistribution layers for use in the manufacture of semiconductors, semiconductor packages and circuit board constructions. More specifically it relates to photoimageable polymers containing vinyl groups capable of being crosslinked during processing and post cured at lower temperatures and shorter times than conventional dielectric materials. The processed compositions are characterized by low dielectric constants and low dissipation factors as well as low moisture uptake, chemical and thermal stability, flexibility and excellent HAST (Highly Accelerated Stress Test) and TCT (Thermal Cycling Test) results. The invention also relates to low dk/df dielectric compositions that are not photoimageable.

Low temperature cure photoimageable dielectric compositions and methods of their use

The present invention is directed to a permanent photoimageable compositions and the cured products thereof useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more alkali soluble, film forming resins or one or more film forming resins that become soluble in alkali solutions by action of an acid, (B) one or more cationic photoinitiators, (C) one or more film casting solvents, and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed compositions.

Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates

The invention relates to polysulfonamide compositions for use as redistribution layers as used in the manufacture of semiconductors and semiconductor packages. More specifically it relates to photoimageable polysulfonamide composition for redistribution applications. The invention also relates to the use of the compositions in semiconductor manufacture.

Polysulfonamide redistribution compositions and methods of their use

The present invention is directed to a printable composition, comprising: 0.5 to 60 wt % of a polymer selected from the group consisting of epoxy, Novolac and poly(dimethylglutarimide); and 40-99.5 wt % of a solvent composition comprising (1) a high boiling point solvent having a flash point greater than about 10&#xb0; C. and a boiling point greater than about 130&#xb0; C. and (2) a low boiling point solvent having a flash point less than 30&#xb0; C. and a boiling point less than or equal to 130&#xb0; C., all weight percents based on the total weight of the composition. The present invention is also directed to methods of forming patterned substrates using the above compositions. The compositions of the invention are useful for printing electronic materials onto a substrate using a piezo-electric printer.

Compositions and processes for manufacturing printed electronics

A composition useful as a lift-off resist comprising at least one solvent, at least one polydimethylglutarimide (PMGI) resin and at least one selected deep-UV absorbing molecule of Formula I, where X is an aromatic or aliphatic bridging group, and Ar and Ar&prime; are aryl groups wherein at least one Ar or Ar&prime; contains one or more hydroxyl or carboxylic acid groups

Deep-UV anti-reflective resist compositions

Compositions useful for a lift-off resist in a bilayer metal lift-off process which comprise a mixture of at least one solvent, at least one polyglutarimide resin and an effective amount of at least one dissolution rate modifier selected from a group consisting of 2,3,4,2&prime;,3&prime;,4&prime;-hexahydroxybenzophenone; hexahydroxyspirobiindane; 2,4,2&prime;,4&prime;-tetrahydroxybenzophenone; 1,1,1-tris-hydroxyphenylethane; 1,7-bis-(hydroxy-3-methoxyphenyl)-1,6-heptadiene-3,5-dione and at least one arylsulfonate ester of these poly-hydroxy aromatic compounds.

Poly-hydroxy aromatic dissolution modifiers for lift-off resists

A composition useful for a thick-film negative resist comprising a mixture of at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin and at least one photoacid generator in a coating solvent, a majority amount of said coating solvent being cyclopentanone.

Growing community of inventors

Chicopee, MA, United States of America

Daniel J Nawrocki