Micron Technology Incorporated

Daniel J Hubbard

Kishore Kumar Muchherla

Sampath K Ratnam

Peter Sean Feeley

Ashutosh Malshe

Kevin Roy Brandt

Yun Li

Christopher S Hale

Marc S Hamilton

Karl David Schuh

Harish Reddy Singidi

James Fitzpatrick

Michael G Miller

Renato C Padilla

Robert W Strong

Ali Mohammadzadeh

Michael B Danielson

Jeffrey L McVay

Jonathan Tanguy

Jonathan Scott Parry

Jeremy Binfet

Luigi Pilolli

Walter Di Francesco

Dheeraj Srinivasan

Umberto Siciliani

Liang Yu

William Richard Akin

Chulbum Kim

Roy Leonard

Tommaso Vali

Aaron S Yip

Huai-Yuan Tseng

Jung Sheng Hoei

Eric N Lee

Michele Piccardi

Luca Bert

June Lee

Jeffrey S McNeil, Jr

Akira Goda

Michele Incarnati

David Scott Ebsen

Xiangyu Tang

Ali Feiz Zarrin Ghalam

Suresh Rajgopal

Andrea Giovanni Xotta

Giovanni Maria Paolucci

Luca Nubile

Dave Scott Ebsen

Biagio Iorio

Rohitkumar Makhija

Brent Byron

Guido Luciano Rizzo

Mary Hubbard

A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.

Multiple current quantization values for peak power management

Aspects of the present disclosure configure a memory sub-system controller to allow a host to deallocate data prior to folding operations. The controller generates an instruction to fold data stored in an individual portion of the set of memory components. The controller, prior to executing the instruction to fold the data stored in the individual portion of the set of memory components, transmits a communication to a host indicative of the instruction to fold the data stored in the individual portion. The controller conditions execution of the instruction to fold the data stored in the individual portion of the set of memory components based on transmission of the communication to the host.

Preemptively warning host of background folding

Systems and methods for specifying storage media types in write commands executable by storage devices are disclosed. An example system comprises: a plurality of memory devices and a controller operatively coupled to the memory devices, the controller configured to: receive a write command specifying a data item and an identifier of a data stream comprising the data item; determine, by parsing the identifier of the data stream, a data stream attribute shared by data items comprised by the data stream; identify, based on the data stream attribute, a memory device managed by the controller; and transmit, to the memory device, an instruction specifying the data item.

Specifying media type in write commands

A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include receiving a request to perform an operation, determining whether to initiate a PPM priority override procedure, and in response to determining to initiate the PPM priority override procedure, performing the PPM priority override procedure to execute the operation. Performing the PPM priority override procedure includes reconfiguring each high current breakpoints as a respective low current breakpoint to execute the operation.

Peak power management priority override

Exemplary methods, apparatuses, and systems include receiving a request to perform an operation in memory. A subdivision of the memory to which the request is directed is determined. A command completion time based upon a command type for the operation and which subdivision of the memory to which the request is directed is determined. A command is sent to the memory for the operation. A request is sent to the memory for a status of the command based upon the determined command completion time.

Adaptive command completion timers

A set of data items programmed to a first region of a memory subsystem is identified. The set of data items is programmed to the first region according to an initial sequence. A determination is made of whether the initial sequence corresponds to a target sequence associated with accessing the set of data items. Responsive to a determination that the initial sequence does not correspond to the target sequence, the set of data items is copied from the first region to a second region of the memory subsystem according to the target sequence.

Data reordering at a memory subsystem

A memory device includes a memory array comprising a plurality of memory planes, wherein the plurality of memory planes are arranged in a plurality of independent plane groups, and wherein each of the plurality of independent plane groups comprises one or more of the plurality of memory planes. The memory device further includes a plurality of independent analog driver circuits coupled to the memory array, wherein a respective one of the plurality of independent analog driver circuits is associated with a respective one of the plurality of independent plane groups. The memory device further includes a common analog circuit coupled to the memory array, wherein the common analog circuit is shared by the plurality of independent analog driver circuits and the plurality of independent plane groups. The memory device further includes a plurality of control logic elements, wherein a respective one of the plurality of control logic elements is associated with a respective one of the plurality of independent analog driver circuits and a respective one of the plurality of independent plane groups.

Independent plane architecture in a memory device

Operations include establishing a queue storing a list of data burst commands to be communicated via a multiplexed interface coupled to the set of memory dies, communicating, during a first time period, a first data burst command in the queue to a first memory die of the set of memory dies via the multiplexed interface, and communicating, during a second time period, a second data burst command in the queue to a second memory die of the set of memory dies via the multiplexed interface, where a first latency associated with the first data burst command occurs during the second time period.

Data burst queue management

A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including initiating a write operation to write data to a first multiple level cell (XLC) storage including a first XLC block and a second XLC storage including a second XLC block, and causing a first portion of the data to be written to a first number of pages of the first XLC block and a second portion of the data to be written to a second number of pages of the second XLC block using page level interleave. The first number of pages and the second number of pages are defined by an interleave mix including an interleave ratio between a first XLC write mode and a second XLC write mode.

Enhanced write performance utilizing program interleave

A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.

Memory device with dynamic cache management

Exemplary methods, apparatuses, and systems including a programming manager for controlling writing data bits to a memory device. The programming manager receives a first set of data bits for programming to memory. The programming manager writes a first subset of data bits to a first wordline during a first pass of programming. The programming manager writes a second subset of data bits of the first set of data bits to a buffer. The programming manager receives a second set of data bits for programming. The programming manager writes the second subset of data bits of the first set of data bits to the first wordline during a second pass of programming to increase a bit density of memory cells in the first wordline in response to receiving the second set of data bits.

Two-pass corrective programming for memory cells that store multiple bits and power loss management for two-pass corrective programming

A set of host data items is received for programming to the memory subsystem. The set of host data items is programmed to a first region of the memory subsystem that includes one or more memory devices. A determination is made that a sequence at which the set of host data items are programmed across memory devices of the first region does not correspond to a target sequence associated with accessing the set of host data items via the first region. The target sequence corresponds to a sequence that enables a host data items programmed to the memory sub-system to be accessed in parallel. The set of host data items is copied from the first region to a second region of the memory subsystem. A sequence at which the set of host data items is copied to memory devices of the second region corresponds to the target sequence.

A system includes a memory sub-system including a single-level cell (SLC) cache, a first multiple level cell (XLC) storage including a first XLC block, and a second XLC storage including a second XLC block. Data is indirectly written to the first XLC storage via the SLC cache in a first XLC write mode, and data is directly written to the second XLC storage in a second XLC write mode. The system further includes a processing device to perform operations including receiving data from a host system, in response to receiving the data, initiating a write operation to write the data to the first XLC storage and the second XLC storage, and causing subsets of the data to be alternatively written to the first XLC block in the first XLC write mode and to the second XLC block in the second XLC write mode using page level interleave.

This present invention relates to a flavor dispensing drinking straw device designed to retain and dispense an appropriate amount of flavoring, syrup and/or medicine into a beverage as per the desires of the users. The device comprises a topper having an internal cavity that holds a predefined amount of flavoring, syrup and/or medicine that the user can dispense through a spiral straw by simply and gently squeezing the topper, wherein the user can then consume the flavored or medicated beverage through a second tubular straw in a traditional manner. The uniquely designed straw device is both environmentally safe and reusable. Additionally, the topper can be refilled with the flavor, once the stored flavor is exhausted. The flavor infusing straw offers a more enjoyable and delicious drinking experience, and can be used with a variety of beverage containers.

Flavor dispensing drinking straw

Exemplary methods, apparatuses, and systems include aggregating a plurality of memory status commands Each command of the plurality of memory status commands is assigned a corresponding bit on a memory interface. The plurality of memory status commands are sent in parallel as an aggregate status command to one or more memory components via the memory interface.

Memory status command aggregation

Growing community of inventors

Boise, ID, United States of America

Daniel J Hubbard