Other

International Business Machines Corporation

Daniel J Fleming

Geoffrey B Stephens

David L Bergeron

Danny Tongsan Xiao

Paul C Castrucci

Albert S Bergendahl

D L Bergeron

A method of fabricating a film of magnetic nanocomposite particles including depositing isolated clusters of magnetic nanoparticles onto a substrate surface and coating the isolated clusters of magnetic nanoparticles with an insulator coating. The isolated clusters of magnetic nanoparticles have a dimension in the range between 1 and 300 nanometers and are separated from each other by a distance in the range between 1 and 50 nanometers. By employing PVD, ablation, and CVD techniques the range of useful film thicknesses is extended to 10-1000 nm, suitable for use in wafer based processing. The described methods for depositing the magnetic nanocomposite thin films are compatible with conventional IC wafer and Integrated Passive Device fabrication.

Systems and methods for forming magnetic nanocomposite materials

An encasement device for a portable computer and other associated peripheral devices, which when opened represents an organized, and ready-to-use standalone workstation. It includes a top box-type structure and a bottom box-type structure both having a front, a back, a pair of side walls and cover or bottom respectively. The top box-type structure is hingedly connected and securable to the bottom box-type structure. A droppable front is provided for easy access to the keyboard of the portable computer and has a wrist pad. Alternatively, the case is provided with a contoured structure for easy access. The portable computer is removeably attached to the bottom box-type structure such that access is available to side-orientated internal devices. An electrical containment section is provided to hold connectors, an outlet cord, surge protectors and power conditioners. A foldable staging area is provided to removeably hold a peripheral device. The foldable staging area is positioned such that when the encasement device is open, the foldable staging area has adequate clearance for the display screen of the portable computer and can also fit within the top box-type structure when said encasement device is closed. It further includes ports for external devices such as modems and facsimile devices.

Laptop computer encasement device adapted for printer

A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode and controls the lifetime of minority carriers in the outside region of the substrate. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through an oxide layer creating a rectifying junction with the semiconductor substrate in the central region.

Schottky Barrier diode with controlled characteristics

A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode. In the region of the substrate surrounding the annular region, where the ion implantation takes place through the full thickness of the oxide, the lifetime of minority carriers is controlled. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through the oxide layer creating a rectifying junction with the semiconductor substrate in the central region.

Growing community of inventors

South Burlington, VT, United States of America

Daniel J Fleming