United States of America As Represented by the Secretary of the Air Force

Daniel J Burns

Mark T Pronobis

Mark W Levi

James C Sethares

Herbert F Helbig

Charles A Eldering

David C Williamson

Thomas E Renz

Gerald G Sweet

Apparatus for inducing, impeding, selectively filtering or otherwise effecting fluid flow in microfluidics applications. Opposing mesh layers are placed into relative motion by a variety of motive forces. Fluid between the opposing mesh layers is compressed so as to be pumped through the mesh layers when the relative motion of the layers is toward each other. Mesh layers may also be offset from each other though an actuating force so that one mesh layer blocks the openings in the other mesh layer, thereby creating an impediment to fluid flow. The degree of offset may be varied so as to create a partial impediment to fluid flow, thereby presenting a filter effect.

Multifunction microfluidics device

A novel microelectromechanical system artificial neural network (MEMS ANN) device performs the function of a conventional artificial neural network node element. Micro-machined polysilicon or high aspect ratio composite beam micro-resonators replace as computational elements the silicon transistors and software simulations of prior-art ANNs. The basic MEMSANN device forms a non-linear (e.g., sigmoid) function of a sum of products. Products of the magnitudes of sine waves, applied to the input drive comb and shuttle magnitudes, are formed in the frequency domain and summed by coupling a plurality of resonators with a mechanical coupling frame, or by integrating them into one resonator. A sigmoid function is applied to the sum of products by shaping the overlap capacitance of the output comb fingers of the resonator. Methods of building and using various single MEMS ANN devices and multi-layered arrays of MEMS ANN circuits are also described. These novel MEMS ANNs exhibit an attractive combination of performance characteristics, compared to conventional hardware ANNs that use silicon transistors or simulations of ANNs running in software on digital computers, including lower cost, simpler design, wider temperature range, greater radiation tolerance, and lower operating and standby power. These advantages favorably impact system weight and size because of reduced shielding, cooling, and power requirements.

Microelectromechanical system artificial neural network device

Apparatus and method to measure the characteristics of the substantially periodic motion of a mechanical system. A non-intrusive technique measures such motion by analyzing images of a movable component of the system without requiring a motion sensor built into the system. If the system includes a motion sensor, the present invention can calibrate it. The present invention applies to an object of any length scale if it can be imaged. The amplitude of a component's motion is obtained from a single, time-exposed image while the system is in periodic motion and a reference image made with the component at rest. The technique, implemented as one component of an automated test-bed apparatus, is significantly faster than the prior art. The present invention is especially efficient in characterizing the mechanical performance of MEMS. Speed facilitates both hands-on testing of prototypes and testing in production environments. Results from the present invention applied to a microfabricated resonator are compared with electrical measurements derived from an integrated comb-drive. Benchmark comparisons demonstrate that the present invention delivers comparable results in shorter times with simpler, less expensive apparatus than the prior art. The present invention removes any upper limit on the frequency of motions that can be analyzed.

Measuring the characteristics of oscillating motion

A method is disclosed for testing or screening metal or polysilicon conductors and contacts on microelectronic devices that it uses a modified design layout for individual logic gates to enable high current density testing of all such elements used in the final functional circuit. The method uses a special metal pattern adding metal conductor paths to enable high current testing of normal conductors and contacts at an intermediate point during fabrication. The metal layer is patterned a second time to remove the high current paths and enable functional operation. This allows burn-in and screen testing to be performed at higher current densities than would otherwise be possible.

Screening of conductors and contacts on microelectronic devices

An apparatus for applying high current fast rise time pulses simulating electrostatic discharge (ESD) to various combinations of pins of a device under test (e.g., a microcircuit). The apparatus also provides for testing of the DUT after the performance of ESD stress testing. The apparatus establishes electrical connections between the terminals of a high voltage pulse generator (HVPG) and several different combinations of the DUT pins in sequence in order to apply ESD stresses. The apparatus further provides functional parameter tests whether the connection to the DUT pins during ESD stressing has caused the DUT to fail.

Apparatus for electrostatic discharge (ESD) stress/testing

A method for characterizing critical timing paths and analyzing timing related failure modes in high clock rate photocurrent at the drain of a single transistor in a very large scale integrated circuit. The laser testing apparatus utilized with the method of this invention incorporates therein a laser having its output beam focused onto the drain junction of the transistor under test. The localized injection of electromagnetic radiation produces a photocurrent at the drain junction of the transistor at specific times during the testing procedure which increases the logic level transition times associated with that particular node. This causes an increase in the minimum operating power supply and/or a decrease in the maximum operating frequency at which the microcircuit will properly function. Consideration of these parameters and the level of photocurrent provide a measurement related to the worst case timing margin which occurs during the functional test of the integrated microcircuit.

Method of characterizing critical timing paths and analyzing timing

Nondestructive testing and analyzing of surface acoustic wave (SAW) interdigital transducers is accomplished by observing electro-optic changes in a layer of liquid crystals produced by the effects of electric fields resulting from an electrical potential applied to the transducer. A display cell comprising a liquid crystal layer covered with a gold coated glass coverplate is fabricated on the surface of the SAW substrate under test. The assembled display cell is positioned for viewing under a microscope equipped for vertical illumination by a light source and a beam splitter. Polarizers are positioned in the illumination and viewing paths. An electrical potential is applied to the SAW device transducers and in some instances to the coverplate gold coat. Electro-optic effects produced in the liquid crystal by the electric field effects of the applied electrical potential are viewed through the microscope and are analyzed and interpreted.

Method for testing and analyzing surface acoustic wave interdigital

An integrated circuit test analysis apparatus for visually interpreting voltage changes of active circuit components uses the electro-optic display effect of circuit electric field upon the liquid crystal layer which is applied over the circuit being tested. The normal state duty cycles in a repeating sequence of test states of the integrated circuit is modified by causing the integrated circuit to pause or maintain a particular state at one or more specific time periods for a predetermined time interval to permit the display to be recorded.

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Rome, NY, United States of America

Daniel J Burns