Infineon Technologies Austria Ag

Daniel Hölzl

Hans-Joachim Schulze

Gabor Mezoesi

Waqas Mumtaz Syed

Henning Kraack

A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6&#xd7;10cm; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 &#x3bc;m. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.

Semiconductor devices with superjunction structures

A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6&#xd7;10cm, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.

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Unterhaching, Germany

Daniel Hölzl