Xerox Corporation

Daniel Hofstetter

Linda T Romano

Thomas L Paoli

Michael A Kneissl

Decai Sun

David P Bour

Noble Marshall Johnson

Philip D Floyd

Ross D Bringans

Clarence John Dunnrowicz

Chris G Van De Walle

A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.

Distributed feedback laser fabricated by lateral overgrowth of an active region

Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.

MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer

The present invention provides an independently addressable, vertical cavity surface emitting laser ('VCSEL') in the blue wavelength range of 390 to 430 nanometers. The gallium nitride-based laser structure is grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask on the gallium nitride layer on a sapphire substrate, areas in a second gallium nitride layer can have a low defect density upon which the remainder of the laser structure can be formed.

Blue vertical cavity surface emitting laser

This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.

Multiple wavelength laser arrays by flip-chip bonding

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Neuchatel, Switzerland

Daniel Hofstetter